SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
IPP77N06S212AKSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 55V 77A TO220-3. Review the specifications below when checking this part for your BOM.
The IPP77N06S212AKSA1 is an N-channel enhancement mode OptiMOS power transistor in a PG-TO220-3-1 package. It features a drain-source voltage of 55 V and a continuous drain current of 77 A at 25°C. The maximum on-state resistance is 12 mΩ at VGS=10V, with a total gate charge of 60 nC. Thermal resistance from junction to case is 0.95 K/W, supporting a maximum operating temperature of 175°C.
Verify the specific ordering code SP0002-18172 against the required PG-TO220-3-1 leaded package configuration. Confirm that the component meets the automotive AEC-Q101 qualification standards required for your specific application environment. Ensure thermal management designs account for the specified junction-to-case thermal resistance values.
Select this component when a 55 V N-channel MOSFET with high current handling capability is required. The TO-220 package facilitates through-hole mounting and heatsinking. Consider the 175°C operating temperature range for high-thermal environments. Verify gate drive compatibility with the specified threshold voltage range.
This part belongs to Infineon's OptiMOS family, designed for automotive and industrial power switching. It utilizes silicon technology optimized for low on-resistance and fast switching speeds. The product line emphasizes durability and efficiency in demanding electrical environments.
IPB77N06S2-12 (Surface Mount PG-TO263-3-2 Package)
The maximum pulsed drain current is 308 A at TC=25°C.
Yes, the device is 100% avalanche tested and supports single pulse avalanche energy up to 280 mJ at ID=77 A.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.