Single FETs, MOSFETs IPP77N06S212AKSA1 product image

IPP77N06S212AKSA1

  • Description:MOSFET N-CH 55V 77A TO220-3
  • Series:OptiMOS™
  • Mfr:Infineon Technologies
  • Package:Tube

SKU:e22bcaf824b2 Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

IPP77N06S212AKSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 55V 77A TO220-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IPP77N06S212AKSA1

  • Description:MOSFET N-CH 55V 77A TO220-3
  • Series:OptiMOS™
  • Mfr:Infineon Technologies
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):55 V
  • Current - Continuous Drain (Id) @ 25°C:77A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:12mOhm @ 38A, 10V
  • Vgs(th) (Max) @ Id:4V @ 93µA
  • Gate Charge (Qg) (Max) @ Vgs:60 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1770 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):158W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Through Hole
  • Supplier Device Package:PG-TO220-3-1
  • Package / Case:TO-220-3

Single FETs, MOSFETs datasheet and documents for IPP77N06S212AKSA1

IPP77N06S212AKSA1

Single FETs, MOSFETs Overview

The IPP77N06S212AKSA1 is an N-channel enhancement mode OptiMOS power transistor in a PG-TO220-3-1 package. It features a drain-source voltage of 55 V and a continuous drain current of 77 A at 25°C. The maximum on-state resistance is 12 mΩ at VGS=10V, with a total gate charge of 60 nC. Thermal resistance from junction to case is 0.95 K/W, supporting a maximum operating temperature of 175°C.

Single FETs, MOSFETs Feature Summary

  • Automotive AEC-Q101 qualified for high reliability
  • Ultra-low RDS(on) for efficient conduction
  • 100% avalanche tested for robustness
  • Lead-free green package compliant

Single FETs, MOSFETs Applications

  • Automotive powertrain applications
  • High-side and low-side switching
  • Motor control circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code SP0002-18172 against the required PG-TO220-3-1 leaded package configuration. Confirm that the component meets the automotive AEC-Q101 qualification standards required for your specific application environment. Ensure thermal management designs account for the specified junction-to-case thermal resistance values.

Single FETs, MOSFETs Selection Notes

Select this component when a 55 V N-channel MOSFET with high current handling capability is required. The TO-220 package facilitates through-hole mounting and heatsinking. Consider the 175°C operating temperature range for high-thermal environments. Verify gate drive compatibility with the specified threshold voltage range.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's OptiMOS family, designed for automotive and industrial power switching. It utilizes silicon technology optimized for low on-resistance and fast switching speeds. The product line emphasizes durability and efficiency in demanding electrical environments.

Single FETs, MOSFETs Replacement Considerations

IPB77N06S2-12 (Surface Mount PG-TO263-3-2 Package)

Single FETs, MOSFETs FAQ

What is the maximum pulsed drain current?

The maximum pulsed drain current is 308 A at TC=25°C.

Is the device suitable for avalanche operation?

Yes, the device is 100% avalanche tested and supports single pulse avalanche energy up to 280 mJ at ID=77 A.

IPP77N06S212AKSA1IPP77N06S212AKSA1

Click on the inquiry