IPS110N12N3GBKMA1

Single FETs, MOSFETs Overview

The IPS110N12N3 G is an N-channel OptiMOS 3 power transistor designed for industrial and multimarket applications. It features a PG-TO251-3 package with a maximum drain-source voltage of 120 V and a continuous drain current of 75 A at 25 °C. The device exhibits a maximum on-resistance of 11 mΩ and supports an operating temperature range from -55 °C to 175 °C. Key electrical characteristics include a gate charge of 49 nC, avalanche energy capability of 120 mJ, and a thermal resistance junction-to-case of 1.1 K/W.

Single FETs, MOSFETs Feature Summary

• Optimized low on-resistance combined with excellent gate charge product for high-frequency switching efficiency
• Robust avalanche energy rating suitable for inductive load switching applications
• Designed for synchronous rectification and high-frequency power conversion circuits

Single FETs, MOSFETs Applications

• High-frequency switching power supplies
• Synchronous rectification stages
• Industrial motor control systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix matches the required package variant, as the datasheet distinguishes between PG-TO251-3 and PG-TO252-3 packages. Confirm compliance with RoHS directives and halogen-free requirements prior to integration. Ensure thermal management design accounts for the specified junction-to-case thermal resistance values under actual operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component when a 120 V N-channel MOSFET with optimized switching performance is required. The PG-TO251-3 package provides a compact footprint suitable for surface-mount designs. Consider the 175 °C maximum junction temperature rating for high-temperature environments. Evaluate the total gate charge against the available gate drive capability to ensure adequate switching speeds.

Single FETs, MOSFETs Part Context

This part belongs to the Infineon OptiMOS 3 family, which utilizes advanced planar trench technology. The IPS110N12N3 G shares core electrical specifications with the IPD110N12N3 G but differs in physical packaging. The OptiMOS 3 series targets cost-effective solutions for general-purpose power switching while maintaining high reliability standards for industrial use.

Single FETs, MOSFETs Replacement Considerations

The IPD110N12N3 G serves as a direct functional equivalent within the same datasheet, differing primarily in its PG-TO252-3 package configuration. Verify pinout compatibility and mechanical dimensions before substituting.