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Product Detailed Parameters
- Description：TRENCH 40<-<100V
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：-
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The IPT009N08NM6ATMA1 is an N-channel power MOSFET from Infineon's OptiMOS 6 series, designed for high-efficiency switching applications. It features a drain-source voltage (Vds) of 80 V and a continuous drain current (Id) of 43 A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 950 µΩ at 10 V gate drive. Packaged in the PG-HSOF-8 surface-mount format, it supports operation across a junction temperature range of -55 °C to +175 °C, ensuring robust performance in demanding thermal environments.
Feature Summary
- OptiMOS 6 technology delivers low conduction losses through minimized on-resistance.
- PG-HSOF-8 package provides efficient thermal dissipation and compact footprint.
- Enhanced ruggedness supports high surge currents up to 425 A.
Applications
- Automotive DC-DC converters
- On-board charger (OBC) stages
- Motor control circuits
Procurement Notes
Verify the complete part number including the ATMA1 suffix to ensure correct tape-and-reel packaging configuration. Confirm that the requested quantity aligns with standard reel sizes to avoid cut-tape handling issues. Cross-reference the datasheet revision date to ensure compatibility with latest thermal guidelines. Ensure storage conditions meet semiconductor preservation standards prior to assembly.
Selection Notes
Select this component when an 80 V rating is sufficient and low Rds(on) is critical for efficiency. Compare thermal resistance values against system heat sink capabilities. Evaluate gate charge requirements against driver strength to optimize switching speed. Consider the PG-HSOF-8 footprint constraints during PCB layout design.
Part Context
This device belongs to the OptiMOS 6 family, representing advanced silicon carbide trench gate technology within Infineon's portfolio. It targets automotive and industrial sectors requiring high reliability. The series emphasizes reduced switching losses and improved thermal stability compared to previous generations.
Replacement Considerations
Direct substitutes include other OptiMOS 6 devices with similar voltage and current ratings, such as IPT012N06N or IQE036N08NM6SCATMA1, provided pinout and thermal characteristics match the application requirements.
