ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
IPTG039N15NM5ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is TRENCH >=100V. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IPTG039N15NM5ATMA1
- Description：TRENCH >=100V
- Series：OptiMOS™ 5
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：150 V
- Current - Continuous Drain (Id) @ 25°C：21A (Ta), 190A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：8V, 10V
- Rds On (Max) @ Id, Vgs：3.9mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id：4.6V @ 243µA
- Gate Charge (Qg) (Max) @ Vgs：93 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：7300 pF @ 75 V
- FET Feature：-
- Power Dissipation (Max)：3.8W (Ta), 319W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-HSOG-8
- Package / Case：8-PowerSMD, Gull Wing
Single FETs, MOSFETs datasheet and documents for IPTG039N15NM5ATMA1
Single FETs, MOSFETs Overview
The IPTG039N15NM5ATMA1 is an N-channel OptiMOS™ 5 power transistor with a 150 V drain-source breakdown voltage. It features a maximum on-state resistance of 3.9 mΩ at 25°C and supports a continuous drain current of 190 A. The device utilizes PG-HSOG-8 surface-mount packaging, offering a thermal resistance from junction to case of 0.47 °C/W. It includes avalanche energy ratings of 344 mJ and total gate charge of 74 nC.
Single FETs, MOSFETs Feature Summary
- Very low on-resistance for high efficiency
- Superior thermal resistance characteristics
- 100% avalanche tested for reliability
Single FETs, MOSFETs Applications
- Server power supply units
- AC-DC power conversion for telecommunications infrastructure
- Power adapters and chargers
- Low-voltage drives
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix ATMA1 against official Infineon documentation to confirm reel specifications and tape-and-reel dimensions. Ensure that the PG-HSOG-8 package footprint matches the target PCB design guidelines provided in the datasheet package outlines section before finalizing procurement orders.
Single FETs, MOSFETs Selection Notes
Select this component when a 150 V rating is required alongside high current handling capabilities up to 190 A. The low on-resistance makes it suitable for applications prioritizing conduction loss reduction. Evaluate the thermal management requirements based on the specified junction-to-case resistance values to ensure adequate heat dissipation in the intended enclosure.
Single FETs, MOSFETs Part Context
This part belongs to the OptiMOS™ 5 family of power transistors designed for industrial applications. It represents a generation of silicon MOSFETs optimized for fast switching and low losses. The technology focuses on improving the figure of merit between on-resistance and gate charge compared to previous iterations.
Single FETs, MOSFETs Replacement Considerations
Check for direct substitutes within the same OptiMOS™ 5 family or other Infineon 150 V series such as IPTG039N15N5 variants. Verify pinout compatibility and thermal performance metrics before swapping components in existing designs.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
