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IPU64CN10N G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 17A TO251-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IPU64CN10N G
- Description：MOSFET N-CH 100V 17A TO251-3
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：64mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id：4V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs：9 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：569 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：44W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：PG-TO251-3
- Package / Case：TO-251-3 Short Leads, IPAK, TO-251AA
Single FETs, MOSFETs datasheet and documents for IPU64CN10N G
Single FETs, MOSFETs Overview
The IPU64CN10N G is a single N-channel silicon MOSFET from Infineon Technologies, housed in a TO-251-3 (TO-252) through-hole package. It features a drain-source breakdown voltage of 100 V and a continuous drain current of 17 A. The device exhibits a maximum on-resistance of 64 mΩ at 10 V gate drive. It supports a gate-source voltage range of ±20 V and operates within a temperature range of -55 °C to +175 °C. Power dissipation is rated at 44 W, with typical switching times of 7 ns turn-on delay and 9 ns turn-off delay.
Single FETs, MOSFETs Feature Summary
- Utilizes OptiMOS technology for optimized low on-resistance performance
- Designed for high thermal stability with an extended operating temperature range up to 175 °C
- Features fast switching characteristics suitable for efficient power control applications
Single FETs, MOSFETs Applications
- DC-DC converter circuits
- Motor control systems
- Power supply switching stages
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix 'G' against official documentation to confirm RoHS compliance status. Confirm lead frame plating and marking codes match the required revision level. Check for obsolescence notices as distribution availability may vary significantly for discontinued or end-of-life components.
Single FETs, MOSFETs Selection Notes
Select this component when a robust through-hole N-channel MOSFET is required for moderate current applications. Ensure the 100 V voltage rating exceeds the circuit's peak transient requirements. Verify that the TO-251-3 package footprint aligns with the PCB design constraints and thermal management strategy.
Single FETs, MOSFETs Part Context
This part belongs to Infineon's OptiMOS family of power transistors, designed for general-purpose switching applications. It represents a standard discrete solution for industrial and consumer electronics where reliable N-channel switching is necessary without the complexity of integrated driver circuits.
Single FETs, MOSFETs Replacement Considerations
Consult official cross-reference guides for direct pin-compatible alternatives. Verify that any substitute maintains identical voltage, current, and thermal specifications.
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