IPW60R080P7XKSA1

$4.68

Description：MOSFET N-CH 600V 37A TO247-3
Series：CoolMOS™ P7
Mfr：Infineon Technologies
Package：Tube

SKU:985f4a58cf5f Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IPW60R080P7XKSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 600V 37A TO247-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IPW60R080P7XKSA1

Description：MOSFET N-CH 600V 37A TO247-3
Series：CoolMOS™ P7
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：37A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：80mOhm @ 11.8A, 10V
Vgs(th) (Max) @ Id：4V @ 590µA
Gate Charge (Qg) (Max) @ Vgs：51 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2180 pF @ 400 V
FET Feature：-
Power Dissipation (Max)：129W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：PG-TO247-3
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for IPW60R080P7XKSA1

IPW60R080P7XKSA1

Single FETs, MOSFETs Overview

The IPW60R080P7XKSA1 is a 600V CoolMOS P7 N-channel power MOSFET in a PG-TO-247-3 package. It features a maximum drain-source breakdown voltage of 650V and a typical gate charge of 51nC. The device supports a pulsed drain current of 110A and exhibits an effective output capacitance energy of 5.5µJ at 400V. Its body diode handles a commutation speed of 900A/µs, with a thermal resistance from junction to case of 0.97°C/W.

Single FETs, MOSFETs Feature Summary

Superjunction technology providing low ringing tendency and high robustness against hard commutation
Excellent electrostatic discharge capability exceeding 2kV (HBM)
Optimized for reduced switching and conduction losses to improve efficiency

Single FETs, MOSFETs Applications

Power factor correction stages
Hard switching PWM stages
Resonant switching stages

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix XKSA1 matches the required PG-TO-247-3 leaded package configuration. Confirm that the component meets JEDEC industrial qualification standards if intended for such environments. Ensure the ordering code aligns with the manufacturer's final datasheet version Rev. 2.1 to guarantee accurate electrical parameter compliance.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high dv/dt ruggedness and superior body diode performance. The low RDS(on) per package area facilitates compact solutions. Consider the 0.97°C/W thermal resistance for heat sink sizing. Verify compatibility with gate drive voltages up to 20V static limits.

Single FETs, MOSFETs Part Context

This transistor belongs to the Infineon CoolMOS P7 series, succeeding the P6 generation. It utilizes superjunction principles to combine fast switching with ease of use. The device is designed for high-voltage power applications where efficiency and thermal management are critical constraints.