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IPW65R035CFD7AXKSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 650V 63A TO247-3-41. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IPW65R035CFD7AXKSA1
- Description：MOSFET N-CH 650V 63A TO247-3-41
- Series：CoolMOS™ CFD7A
- Mfr：Infineon Technologies
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：63A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：35mOhm @ 35.8A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 1.79mA
- Gate Charge (Qg) (Max) @ Vgs：145 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：7149 pF @ 400 V
- FET Feature：-
- Power Dissipation (Max)：305W (Tc)
- Operating Temperature：-40°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：PG-TO247-3-41
- Package / Case：TO-247-3
Single FETs, MOSFETs datasheet and documents for IPW65R035CFD7AXKSA1
Single FETs, MOSFETs Overview
The IPW65R035CFD7AXKSA1 is an automotive-qualified N-channel CoolMOS CFD7A power MOSFET in a PG-TO247-3 package. It features a drain-source breakdown voltage of 650 V and a maximum on-state resistance of 35 mΩ at 10 V gate drive. The device supports a continuous drain current of 63 A at 25°C case temperature and handles pulsed currents up to 304 A. Key dynamic parameters include a typical total gate charge of 145 nC, reverse recovery charge of 1.6 µC, and avalanche energy capability of 358 mJ. Thermal resistance from junction to case is 0.41 °C/W.
Single FETs, MOSFETs Feature Summary
- Automotive qualified according to AEC-Q101 standards
- Integrated fast body diode with ultra-low reverse recovery charge
- Optimized for high-frequency switching applications
- 100% avalanche tested for enhanced ruggedness
Single FETs, MOSFETs Applications
- Unidirectional and bidirectional DC-DC converters
- On-board battery chargers
- Power factor correction stages
- Resonant switching topologies like LLC
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix AXKSA1 against official Infineon documentation to confirm exact marking and tape-and-reel specifications. Ensure compatibility with PG-TO247-3 mounting requirements. Confirm that the component meets the required AEC-Q101 qualification level for your specific automotive application before finalizing procurement.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring high efficiency in 650V systems. The low RDS(on) and Qg values support higher switching frequencies. Evaluate cosmic radiation effects if operating above 475V blocking voltage. Ensure thermal management accommodates the specified junction-to-case resistance for reliable operation under load.
Single FETs, MOSFETs Part Context
This part belongs to the CoolMOS CFD7A series, representing Infineon's latest generation of automotive-grade high-voltage MOSFETs. It succeeds previous generations by offering improved robustness and lower figure-of-merit values. The CFD7A technology is specifically engineered to meet the stringent quality and reliability demands of modern automotive electronics.
Single FETs, MOSFETs Replacement Considerations
Consult official Infineon cross-reference lists for verified substitutes. Direct replacements must maintain equivalent voltage ratings, package dimensions, and thermal characteristics. Verify that any alternative device also holds AEC-Q101 certification if used in automotive contexts.
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