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IPZ40N04S53R9ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET_(20V 40V) PG-TSDSON-8. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IPZ40N04S53R9ATMA1
- Description：MOSFET_(20V 40V) PG-TSDSON-8
- Series：OptiMOS™ 5
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：89A (Tj)
- Drive Voltage (Max Rds On, Min Rds On)：7V, 10V
- Rds On (Max) @ Id, Vgs：3.9mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：3.4V @ 21µA
- Gate Charge (Qg) (Max) @ Vgs：25 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1737 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：58W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TSDSON-8-33
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for IPZ40N04S53R9ATMA1
Single FETs, MOSFETs Overview
The IPZ40N04S5-3R9 is an OptiMOS™-5 automotive power MOSFET featuring a 40 V drain-source voltage and a maximum on-state resistance of 3.9 mΩ at 10 V gate drive. It supports a continuous chip-limited drain current of 89 A and a pulsed current of 256 A. The device utilizes a PG-TSDSON-8-33 package, operates up to 175 °C junction temperature, and meets AEC-Q101 standards with extended qualification.
Single FETs, MOSFETs Feature Summary
- OptiMOS™-5 technology optimized for automotive applications
- Extended qualification beyond standard AEC-Q101 requirements
- Robust design verified through 100% avalanche testing
- High thermal stability supporting 175 °C operating temperatures
Single FETs, MOSFETs Applications
- General automotive electronic systems
- Automotive power switching circuits
- Low-voltage DC-DC conversion stages
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix -3R9 against official Infineon documentation to confirm exact electrical tolerances and marking codes. Confirm RoHS compliance status and check for any recent lifecycle changes or obsolescence notices directly from the manufacturer before finalizing procurement plans.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring high reliability in automotive environments. Ensure the PCB layout accommodates the PG-TSDSON-8-33 footprint and provides adequate thermal dissipation to maintain junction temperatures within the specified 175 °C limit during peak load operations.
Single FETs, MOSFETs Part Context
This part belongs to the OptiMOS™-5 family, representing advanced silicon carbide gate technology for low-loss switching. It is designed specifically for the stringent demands of automotive electronics, offering improved performance over previous generations while maintaining compatibility with standard surface-mount assembly processes.
Single FETs, MOSFETs Replacement Considerations
Consult official cross-reference lists for direct replacements. Verify that any substitute maintains identical pinout, package dimensions, and exceeds the original 3.9 mΩ RDS(on) specification.
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