IQE006NE2LM5CGATMA1

$1.90

Description：MOSFET N-CH 25V 41A/298A PQFN
Series：OptiMOS™ 5
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:fe071d13621f Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IQE006NE2LM5CGATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 25V 41A/298A PQFN. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IQE006NE2LM5CGATMA1

Description：MOSFET N-CH 25V 41A/298A PQFN
Series：OptiMOS™ 5
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：25 V
Current - Continuous Drain (Id) @ 25°C：41A (Ta), 298A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：0.65mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：82.1 nC @ 10 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：5453 pF @ 12 V
FET Feature：-
Power Dissipation (Max)：2.1W (Ta), 89W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TTFN-9-1
Package / Case：8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for IQE006NE2LM5CGATMA1

IQE006NE2LM5CGATMA1

Single FETs, MOSFETs Overview

The IQE006NE2LM5CG is an OptiMOS 5 power transistor featuring a 25 V drain-source breakdown voltage and a maximum on-resistance of 0.65 mΩ at VGS=10 V. It supports a continuous drain current of 298 A at TC=25 °C and a pulsed current of 1192 A. The device utilizes a PG-TTFN-9-1 package with a thermal resistance from junction to case of 1.4 °C/W. Key dynamic parameters include a total gate charge of 28.5 nC (0V to 4.5 V) and an output charge of 41 nC.

Single FETs, MOSFETs Feature Summary

Logic-level N-channel configuration enabling direct drive compatibility
Superior thermal resistance characteristics for efficient heat dissipation
100% avalanche tested for enhanced ruggedness and reliability

Single FETs, MOSFETs Applications

Industrial applications requiring high efficiency and robust performance
Power conversion systems utilizing low-voltage logic-level control
Automotive, aviation, and aerospace systems with manufacturer approval

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code IQE006NE2LM5CG against the official Infineon datasheet revision 2.1 to ensure correct component identification. Confirm that the required package type PG-TTFN-9-1 matches your PCB footprint design. Ensure compliance with JEDEC standards for industrial applications as specified in the product validation section.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a 25 V rating with minimal conduction losses. The logic-level threshold allows operation with lower gate drive voltages. Consider the thermal resistance of 1.4 °C/W when designing the cooling solution. Verify that the application environment stays within the -55 °C to 150 °C operating temperature range.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS 5 family of power transistors manufactured by Infineon Technologies. It is designed for low-voltage switching applications where high current handling and low on-resistance are critical. The device is fully qualified according to JEDEC standards for industrial use.