IQE220N15NM5SCATMA1

FET, MOSFET Arrays Overview

The IQE220N15NM5SCATMA1 is an N-channel OptiMOS™ 5 power transistor rated for 150 V drain-source voltage. It features a maximum on-state resistance of 22 mΩ at VGS=10 V and supports a continuous drain current of 44 A at TC=25 °C. The device utilizes a PG-WHSON-8 package with dual-side cooling capabilities, providing thermal resistances of 0.8 °C/W (junction-to-case bottom) and 0.7 °C/W (junction-to-case top). Key dynamic parameters include a total gate charge of 14.4 nC and an output charge of 40 nC.

FET, MOSFET Arrays Feature Summary

• Optimized for high-performance synchronous rectification in switch-mode power supplies
• Superior thermal resistance through dual-side cooling technology
• 100% avalanche tested for robustness
• Fully qualified according to JEDEC standards for industrial applications

FET, MOSFET Arrays Applications

• Synchronous rectification in switch-mode power supplies
• Industrial power conversion systems
• High-efficiency AC-DC and DC-DC converters

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix ATMA1 against the manufacturer's official documentation to confirm packaging details such as reel specifications or tape-and-reel dimensions. Ensure that the component version matches the required revision level for your design. Cross-reference the datasheet number and date code to guarantee compliance with current manufacturing standards and material declarations.

FET, MOSFET Arrays Selection Notes

Select this component when designing circuits requiring low conduction losses and efficient heat dissipation in compact form factors. The dual-side cooling feature allows for reduced reliance on large PCB copper areas for thermal management. Consider the 150 V rating and 22 mΩ RDS(on) for balancing efficiency and voltage stress in medium-voltage power stages.

FET, MOSFET Arrays Part Context

This part belongs to Infineon's OptiMOS™ 5 family, which integrates advanced trench gate technology with source-down package designs. The PG-WHSON-8 package variant offers enhanced thermal performance compared to standard surface-mount options. It is engineered specifically for applications demanding high power density and reliability in industrial environments.

FET, MOSFET Arrays Replacement Considerations

Direct replacements must match the 150 V rating, 22 mΩ maximum RDS(on), and PG-WHSON-8 footprint. Verify pinout compatibility, particularly the source connection configuration, and ensure equivalent thermal resistance values are maintained to avoid overheating in existing layouts.

FET, MOSFET Arrays FAQ

What is the thermal resistance from junction to case for the bottom side?

The typical thermal resistance from junction to case via the bottom side is 0.8 °C/W.

Is this component suitable for industrial temperature ranges?

Yes, it is fully qualified according to JEDEC standards for industrial applications and operates within a junction temperature range of -55 °C to 175 °C.

How does the dual-side cooling affect thermal performance?

Dual-side cooling provides separate thermal paths through both the bottom and top of the package, with typical thermal resistances of 0.8 °C/W and 0.7 °C/W respectively, allowing for more effective heat dissipation than single-sided cooling packages.