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IRF1010ZS is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 55V 75A D2PAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IRF1010ZS
- Description：MOSFET N-CH 55V 75A D2PAK
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：7.5mOhm @ 75A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：95 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2840 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：140W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Single FETs, MOSFETs datasheet and documents for IRF1010ZS
Single FETs, MOSFETs Overview
The IRF1010ZS is a single N-channel power MOSFET manufactured by Infineon Technologies using IR MOSFET technology. It features a maximum drain-source voltage (Vds) of 55 V and a continuous drain current (Id) of 94 A. The device exhibits a maximum on-resistance (Rds(on)) of 7.5 mOhms at 10 V gate drive. Packaged in a D2PAK (TO-263) surface-mount format, it supports an operating junction temperature range from -55 °C to +175 °C.
Single FETs, MOSFETs Feature Summary
- Utilizes advanced IR MOSFET technology for low conduction losses
- Capable of high continuous drain current handling
- Supports extended operating temperatures up to 175 °C
- Designed for efficient thermal management in surface-mount applications
Single FETs, MOSFETs Applications
- Industrial motor control systems
- Power supply circuits
- General-purpose switching applications
Single FETs, MOSFETs Procurement Notes
Verify component authenticity through authorized distribution channels due to the prevalence of counterfeit power semiconductors. Confirm package integrity and marking consistency against official datasheet specifications before integration into production lines. Ensure storage conditions meet moisture sensitivity level requirements to prevent soldering defects during assembly processes.
Single FETs, MOSFETs Selection Notes
Select this component when a robust N-channel solution with low on-resistance is required for 55 V systems. The D2PAK package facilitates effective heat dissipation for high-current scenarios. Evaluate thermal resistance parameters against system cooling capabilities to ensure reliable operation within the specified temperature range under expected load conditions.
Single FETs, MOSFETs Part Context
This part belongs to the IRF1010 series of N-channel power MOSFETs from Infineon Technologies. It shares core electrical characteristics with variants like IRF1010ZTRLPBF but differs in packaging configuration. The D2PAK form factor distinguishes it from through-hole alternatives such as the TO-262 or TO-220 packages found in other series members.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes include IRF1010ZTRLPBF and IRF1010NSPBF, which share identical electrical ratings. Verify pinout compatibility and thermal pad dimensions when transitioning between different package styles within the same electrical family.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
