ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
IRF120 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Harris Corporation. Its product description is N-CHANNEL POWER MOSFET. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IRF120
- Description：N-CHANNEL POWER MOSFET
- Series：-
- Mfr：Harris Corporation
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：300mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：15 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：600 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：40W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-3
- Package / Case：TO-204AA
Single FETs, MOSFETs datasheet and documents for IRF120
Single FETs, MOSFETs Overview
The IRF120 is an N-Channel enhancement mode silicon gate power field effect transistor. It is designed to withstand specified energy levels in the breakdown avalanche mode of operation. Key electrical parameters include a drain current rating of 8.0A or 9.2A, with on-resistance values of 0.27Ω and 0.36Ω respectively. The device supports voltage ratings of 80V and 100V.
Single FETs, MOSFETs Feature Summary
- Advanced power MOSFET technology for high-speed switching applications
- Ruggedized design capable of withstanding avalanche breakdown energy
- Linear transfer characteristics suitable for analog switching
Single FETs, MOSFETs Applications
- Switching regulators
- Motor drivers
- Relay drivers
- Drivers for high power bipolar switching transistors
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix or variant code to confirm the exact current and resistance ratings (8.0A/0.27Ω vs 9.2A/0.36Ω) as these parameters vary by manufacturer revision. Confirm the voltage rating matches the system requirement of either 80V or 100V. Ensure the package type aligns with the thermal management strategy for the intended application.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring fast nanosecond switching speeds and low gate drive power. The device allows direct interfacing with integrated circuits due to its high input impedance. Consider the specific on-resistance value required for efficiency calculations when choosing between the available variants.
Single FETs, MOSFETs Part Context
This part belongs to the family of N-Channel enhancement mode silicon gate power field effect transistors. These devices are characterized by majority carrier conduction and are optimized for efficiency in power conversion circuits. The technology focuses on achieving low on-resistance per silicon area while maintaining ruggedness against transient overloads.
Single FETs, MOSFETs Replacement Considerations
Cross-reference with other manufacturers' IRF120 equivalents such as those from Samsung Semiconductor or Fairchild Semiconductor. Verify that the replacement maintains the same pinout, voltage rating, and thermal characteristics to ensure compatibility without circuit redesign.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
