Single FETs, MOSFETs IRF1407PBF product image

IRF1407PBF

$1.05
  • Description:IRF1407 - 12V-300V N-CHANNEL POW
  • Series:HEXFET®
  • Mfr:International Rectifier
  • Package:Bulk

SKU:ee361a5a602b Category: Brand:

  
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IRF1407PBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists International Rectifier. Its product description is IRF1407 - 12V-300V N-CHANNEL POW. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRF1407PBF

  • Description:IRF1407 - 12V-300V N-CHANNEL POW
  • Series:HEXFET®
  • Mfr:International Rectifier
  • Package:Bulk
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):75 V
  • Current - Continuous Drain (Id) @ 25°C:130A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:7.8mOhm @ 78A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:250 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:5600 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):330W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220AB
  • Package / Case:TO-220-3

Single FETs, MOSFETs datasheet and documents for IRF1407PBF

IRF1407PBF

Single FETs, MOSFETs Overview

The IRF1407PBF is an N-Channel HEXFET power MOSFET manufactured by International Rectifier, now part of Infineon Technologies. It features a 75V drain-source voltage rating and a continuous drain current of 130A. The device exhibits an ultra-low on-resistance of 7.8 milliohms with a gate charge of 160nC. Designed for through-hole mounting in TO-220 packages, it supports junction temperatures up to 175°C and includes fast switching capabilities alongside improved repetitive avalanche ratings.

Single FETs, MOSFETs Feature Summary

  • Utilizes advanced Stripe Planar processing technology to achieve extremely low on-resistance per silicon area.
  • Features enhanced dynamic dv/dt rating and improved repetitive avalanche ruggedness for reliable operation.
  • Supports high-temperature operation with a maximum junction temperature of 175°C.

Single FETs, MOSFETs Applications

  • Integrated Starter Alternator (ISA) systems
  • 42 Volts Automotive Electrical Systems
  • High-efficiency synchronous rectification in Switch Mode Power Supplies

Single FETs, MOSFETs Procurement Notes

Verify the component status as Not Recommended for New Designs (NRND). Confirm that the manufacturer designation aligns with Infineon Technologies following the acquisition of International Rectifier. Ensure the specific package variant matches the required thermal and mechanical constraints for the target application before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component for automotive applications requiring robust performance under high current conditions. The low on-resistance minimizes conduction losses, while the high thermal tolerance ensures stability in demanding environments. Evaluate the gate charge requirements against the driving circuit capabilities to ensure optimal switching efficiency.

Single FETs, MOSFETs Part Context

This device belongs to the HEXFET family of power MOSFETs, known for combining high voltage capability with low on-resistance. The IRF1407PBF specifically targets automotive markets, leveraging planar stripe technology to deliver superior electrical performance compared to standard MOSFETs of similar voltage ratings.

Single FETs, MOSFETs Replacement Considerations

Consult official datasheets for cross-reference candidates such as the IRF1407L or IRF1407LPBF. Verify pinout compatibility and electrical parameter equivalence before substituting. Ensure any replacement maintains the required TO-220 package form factor and thermal characteristics.

IRF1407PBFIRF1407PBF
$1.05
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