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IRF3205SPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 55V 110A D2PAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IRF3205SPBF
- Description：MOSFET N-CH 55V 110A D2PAK
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：110A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：8mOhm @ 62A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：146 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3247 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：200W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Single FETs, MOSFETs datasheet and documents for IRF3205SPBF
Single FETs, MOSFETs Overview
The IRF3205SPBF is a HEXFET N-channel power MOSFET manufactured by Infineon Technologies. It features an 8.0 mΩ maximum on-resistance at VGS = 10V and ID = 62A, with a continuous drain current of 110A at TC = 25°C. The device operates within a junction temperature range of -55°C to +175°C and supports a gate-to-source voltage of ±20V. Packaged in the D2Pak (TO-263) surface-mount format, it provides high power capability and low internal connection resistance.
Single FETs, MOSFETs Feature Summary
- Advanced processing technology for extremely low on-resistance per silicon area
- Fast switching speed combined with ruggedized device design
- Fully avalanche rated with dynamic dv/dt rating
- Lead-free construction compliant with industrial market standards
Single FETs, MOSFETs Applications
- High current applications requiring low internal connection resistance
- Low-profile surface mount designs utilizing D2Pak package capabilities
- Industrial power management systems operating up to 175°C
Single FETs, MOSFETs Procurement Notes
Verify that the component matches the specific D2Pak (TO-263) surface-mount package configuration rather than through-hole variants. Confirm lead-free status and manufacturer documentation alignment with Infineon specifications. Ensure thermal management strategies account for the specified junction-to-case resistance values during operation.
Single FETs, MOSFETs Selection Notes
Select this component when a surface-mount solution is required for high-current applications. The D2Pak package accommodates large die sizes for optimal performance. Evaluate thermal dissipation requirements against the 200W power dissipation limit at 25°C case temperature. Consider the 110A continuous current rating for load conditions.
Single FETs, MOSFETs Part Context
This part belongs to the HEXFET family of power MOSFETs from Infineon Technologies. It utilizes advanced processing techniques to achieve ultra-low on-resistance. The product line includes both surface-mount (D2Pak) and through-hole (TO-262/TO-220) variations designed for efficient and reliable operation across various industrial applications.
Single FETs, MOSFETs Replacement Considerations
The IRF3205LPBF serves as the through-hole equivalent using the TO-262 package. Verify pinout compatibility and thermal characteristics when substituting between surface-mount and through-hole versions.
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