IRF3575DTRPBF

FET, MOSFET Arrays Overview

The IRF3575DTRPBF is a single-phase synchronous buck converter integrated power block from Infineon Technologies. It features dual N-channel MOSFETs in a PQFN 6x6 package. Key electrical parameters include a drain-source breakdown voltage of 25V and a maximum gate-source voltage of 16V. The device exhibits an RDS(on) of 1.35 mOhms at 4.5V VGS and 0.90 mOhms at 10V VGS. Continuous drain current reaches 303A at 25°C case temperature and 243A at 70°C. Typical gate-drain charge is 5.2 nC, with a thermal resistance junction-to-ambient of 19.1°C/W.

FET, MOSFET Arrays Feature Summary

• Integrates control and synchronous MOSFETs into a single compact power block for simplified design.
• Features low on-resistance to minimize conduction losses in high-current applications.
• Utilizes exposed top thermal pad technology for efficient heat dissipation.

FET, MOSFET Arrays Applications

• Single-phase synchronous buck converters
• Point-of-load (POL) voltage regulation
• High-density power supply designs

FET, MOSFET Arrays Procurement Notes

Verify the component status as Active and Preferred before procurement planning. Confirm the packaging option is Tape and Reel with a standard quantity of 3000 units per reel. Ensure compatibility with the PQFN 6mm x 6mm footprint during PCB layout. Check for Industrial qualification level requirements if applicable to the target environment.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring high current density in a small form factor. The dual N-channel configuration supports synchronous rectification. Evaluate thermal performance based on the specified junction-to-ambient resistance. Ensure gate drive voltages remain within the 16V maximum limit to prevent device damage.

FET, MOSFET Arrays Part Context

This part belongs to the Integrated Power Block series by Infineon Technologies. It combines power switching elements with control logic to reduce board space. The PQFN 6x6 package provides a robust solution for modern power electronics. It replaces discrete MOSFET solutions by integrating components into a single unit.

FET, MOSFET Arrays FAQ

What is the maximum continuous drain current at a case temperature of 25°C?

The maximum continuous drain current is 303.0 A at a case temperature of 25°C.

What is the typical gate-drain charge value?

The typical gate-drain charge is 5.2 nC.

What is the thermal resistance from junction to ambient?

The thermal resistance junction-to-ambient is 19.1°C/W.