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IRF3707ZPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 59A TO220AB. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IRF3707ZPBF
- Description：MOSFET N-CH 30V 59A TO220AB
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：59A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：9.5mOhm @ 21A, 10V
- Vgs(th) (Max) @ Id：2.25V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs：15 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1210 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：57W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
Single FETs, MOSFETs datasheet and documents for IRF3707ZPBF
Single FETs, MOSFETs Overview
The IRF3707ZPBF is a lead-free HEXFET power MOSFET manufactured by Infineon Technologies. It features an N-channel enhancement mode configuration housed in a TO-220AB package. The device supports a drain-to-source voltage of 30V and delivers a continuous drain current of 42A at a case temperature of 25°C. Its maximum on-resistance is 9.5mΩ at VGS=10V, with a typical gate charge of 9.7nC. The component operates within a junction temperature range of -55°C to +175°C.
Single FETs, MOSFETs Feature Summary
- Low RDS(on) performance at 4.5V gate drive voltage
- Ultra-low gate impedance for efficient switching
- Fully characterized avalanche voltage and current capabilities
Single FETs, MOSFETs Applications
- High frequency synchronous buck converters for computer processor power
- Non-isolated DC/DC converter control FETs
- Synchronous rectification applications
Single FETs, MOSFETs Procurement Notes
Verify the specific package variant against design requirements, as the Z suffix indicates lead-free construction. Confirm thermal management strategies align with the specified junction-to-case resistance values. Ensure sourcing channels provide original manufacturer documentation to validate authenticity and compliance with industrial market qualification standards.
Single FETs, MOSFETs Selection Notes
Evaluate the trade-off between conduction losses defined by RDS(on) and switching losses influenced by gate charge. Consider the impact of Qoss and reverse recovery characteristics on overall system efficiency, particularly in synchronous configurations where these parameters affect adjacent devices. Verify that the chosen operating frequency remains compatible with the device's thermal response limits.
Single FETs, MOSFETs Part Context
This component belongs to the HEXFET family of power MOSFETs designed for high-efficiency switching applications. It represents a transition toward lead-free manufacturing processes while maintaining robust electrical performance. The TO-220AB packaging facilitates through-hole mounting, distinguishing it from surface-mount variants within the same electrical specification family.
Single FETs, MOSFETs Replacement Considerations
Cross-reference with other HEXFET series components sharing identical 30V ratings and comparable on-resistance specifications. Verify pinout compatibility and thermal resistance characteristics before substituting to ensure circuit integrity.
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