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IRF3709ZLPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 87A TO262. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IRF3709ZLPBF
- Description：MOSFET N-CH 30V 87A TO262
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：87A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：6.3mOhm @ 21A, 10V
- Vgs(th) (Max) @ Id：2.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：26 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2130 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：79W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-262
- Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA
Single FETs, MOSFETs datasheet and documents for IRF3709ZLPBF
Single FETs, MOSFETs Overview
The IRF3709ZLPBF is a lead-free, single N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It features a TO-262 (TO-268) package and operates with a drain-source voltage of 30V. The device provides a maximum continuous drain current of 42A at a case temperature of 25°C and supports pulsed currents up to 350A. Key electrical characteristics include a maximum on-resistance of 6.3mΩ at VGS=10V and a typical total gate charge of 17nC. It is designed for high-frequency synchronous buck converters and isolated DC-DC converters.
Single FETs, MOSFETs Feature Summary
- Low RDS(on) at 4.5V VGS
- Low Gate Charge
- Fully Characterized Avalanche Voltage and Current
Single FETs, MOSFETs Applications
- High Frequency Synchronous Buck Converters for Computer Processor Power
- Lead-Free Applications
Single FETs, MOSFETs Procurement Notes
Verify the component status as the datasheet indicates it was designed for the industrial market. Confirm that the specific ordering suffix matches the required lead-free specification and package type. Ensure compatibility with the intended thermal management requirements given the junction-to-case thermal resistance values provided in the specifications.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring low conduction losses and fast switching speeds within a 30V system. Consider the avalanche energy rating if inductive loads are present. Evaluate the thermal performance based on the junction-to-ambient resistance when mounting on PCBs without extensive copper planes.
Single FETs, MOSFETs Part Context
This part belongs to the HEXFET family of power MOSFETs from Infineon Technologies. It utilizes silicon technology and is housed in a TO-262 package. The device is characterized for operation across a wide temperature range, supporting both standard and lead-free assembly processes.
Single FETs, MOSFETs Replacement Considerations
Consult official cross-reference tools for verified substitutes. Ensure any replacement maintains the 30V rating, similar RDS(on), and compatible package dimensions.
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