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IRF3710PBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 57A TO220AB. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IRF3710PBF
- Description：MOSFET N-CH 100V 57A TO220AB
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：57A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：23mOhm @ 28A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：130 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3130 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：200W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
Single FETs, MOSFETs datasheet and documents for IRF3710PBF
Single FETs, MOSFETs Overview
The IRF3710PBF is a single N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It features a TO-220 package with a maximum drain-source breakdown voltage of 100V and a continuous drain current rating of 57A at 25°C case temperature. The device exhibits a maximum on-resistance of 23mΩ at VGS=10V and ID=28A. Key dynamic parameters include a total gate charge of 130nC, turn-on delay time of 12ns, rise time of 58ns, turn-off delay time of 45ns, and fall time of 47ns. It supports an operating junction temperature range from -55°C to +175°C.
Single FETs, MOSFETs Feature Summary
- Advanced HEXFET process technology for low on-resistance per silicon area
- Fast switching capability combined with ruggedized device design
- Fully avalanche rated for reliable operation in inductive loads
- Lead-free packaging compliant with environmental standards
Single FETs, MOSFETs Applications
- Commercial and industrial applications requiring moderate power dissipation levels
- Switching circuits utilizing fast switching speeds
- Inductive load driving where avalanche ruggedness is required
Single FETs, MOSFETs Procurement Notes
Verify the exact ordering suffix against official Infineon documentation before procurement. Confirm that the component meets specific application requirements regarding thermal management and electrical ratings. Ensure compliance with all safety and legal requirements related to the intended use. Cross-reference datasheet revisions to confirm technical specifications match the ordered batch.
Single FETs, MOSFETs Selection Notes
Select this component when a 100V N-channel MOSFET with high current handling is needed. Consider the TO-220 package for through-hole mounting and heat sinking capabilities. Evaluate the 23mΩ on-resistance for conduction loss calculations. Verify that the 130nC gate charge aligns with the driver circuit's output capability for optimal switching performance.
Single FETs, MOSFETs Part Context
This part belongs to the HEXFET Power MOSFET family from Infineon Technologies. These devices utilize advanced processing techniques to achieve extremely low on-resistance. The HEXFET series is known for providing efficient and reliable solutions for a wide variety of power switching applications across commercial and industrial sectors.
Single FETs, MOSFETs Replacement Considerations
Consult the official Infineon cross-reference tools or datasheets for verified substitute part numbers. Ensure any replacement matches the critical electrical parameters such as voltage, current, and on-resistance. Verify package compatibility and thermal characteristics if direct pin-to-pin substitution is required.
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