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IRF3711ZCLPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 20V 92A TO262. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IRF3711ZCLPBF
- Description：MOSFET N-CH 20V 92A TO262
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：92A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：6mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：2.45V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：24 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2150 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：79W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-262
- Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA
Single FETs, MOSFETs datasheet and documents for IRF3711ZCLPBF
Single FETs, MOSFETs Overview
The IRF3711ZCLPBF is a single N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It utilizes planar technology and is housed in a TO-262-3 Long Leads package, also known as I2Pak or TO-262AA. The device features a maximum drain-source voltage of 20 V and a continuous drain current of 92 A at case temperature. Its maximum on-resistance is specified at 6 mOhm. The component supports a junction temperature up to 175 °C and includes avalanche characterization.
Single FETs, MOSFETs Feature Summary
- Ultra-low gate impedance for efficient switching control
- Very low on-resistance at 4.5V gate-source voltage
- Fully characterized avalanche voltage and current capabilities
Single FETs, MOSFETs Applications
- Switching Mode Power Supplies (SMPS)
- DC-DC converter circuits
- Power management systems
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix ZCLPBF against official Infineon documentation to confirm lead frame plating and tape-and-reel specifications. Confirm RoHS compliance status through the manufacturer's current product status page. Ensure the TO-262-3 long lead footprint matches the target PCB design requirements before finalizing procurement orders.
Single FETs, MOSFETs Selection Notes
Select this component when a 20 V rating with high current capacity is required in a through-hole package. The low on-resistance minimizes conduction losses in high-current applications. Verify that the thermal management solution can handle the specified power dissipation limits under actual operating conditions.
Single FETs, MOSFETs Part Context
This part belongs to the IRF3711 family of N-channel power MOSFETs from Infineon Technologies. It represents a standard industry offering for low-voltage, high-current switching applications. The TO-262 package provides robust mechanical stability and thermal performance compared to smaller surface-mount alternatives.
Single FETs, MOSFETs Replacement Considerations
Consult official Infineon cross-reference tools for verified substitutes. Ensure any replacement maintains the 20 V drain-source voltage and compatible pinout configuration.
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