Single FETs, MOSFETs IRF540NLPBF product image

IRF540NLPBF

$0.64
  • Description:MOSFET N-CH 100V 33A TO262
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube

SKU:fc2228ed8f13 Category: Brand:

  
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IRF540NLPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 33A TO262. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRF540NLPBF

  • Description:MOSFET N-CH 100V 33A TO262
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:33A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:44mOhm @ 16A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:71 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1960 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):130W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-262
  • Package / Case:TO-262-3 Long Leads, I2PAK, TO-262AA

Single FETs, MOSFETs datasheet and documents for IRF540NLPBF

IRF540NLPBF

Single FETs, MOSFETs Overview

The IRF540NLPBF is a single N-channel enhancement mode power MOSFET from the HEXFET family, manufactured by Infineon Technologies. It utilizes advanced processing techniques to achieve an ultra-low on-resistance of 44 mΩ at VGS = 10V and ID = 16A. The device supports a continuous drain current of 33 A at 25°C case temperature and handles pulsed currents up to 110 A. It features a maximum drain-to-source breakdown voltage of 100 V and operates within a junction temperature range of -55°C to +175°C. The component is housed in a TO-262 (D2Pak) surface-mount package with three pins.

Single FETs, MOSFETs Feature Summary

  • Advanced HEXFET processing technology for low on-resistance per silicon area
  • Fully avalanche rated with ruggedized device design
  • Fast switching speed capabilities
  • Lead-free construction compliant with environmental standards

Single FETs, MOSFETs Applications

  • High current applications requiring low internal connection resistance
  • Low-profile surface mount designs
  • General purpose switching circuits utilizing fast switching characteristics

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm the lead-free designation and package type. Ensure that the TO-262 footprint matches the recommended layout provided in application notes. Confirm compliance requirements such as RoHS status directly from the manufacturer's datasheet before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component when a surface-mount solution is required for high-current applications needing low conduction losses. Consider the thermal resistance values and derating factors for the intended operating environment. Evaluate the gate charge parameters relative to the driving circuitry to ensure efficient switching performance within the specified voltage limits.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET power MOSFET series, known for combining fast switching speeds with ruggedized designs. The TO-262 package provides high power capability and the lowest possible on-resistance among existing surface mount packages of its class. It serves as the through-hole compatible alternative to the standard D2Pak version for specific mounting needs.

Single FETs, MOSFETs Replacement Considerations

The IRF540NSPbF is the surface mount variant within the same electrical specification family. Verify pinout compatibility and thermal performance differences between the TO-262 and other available packages before substitution.

IRF540NLPBFIRF540NLPBF
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