IRF540STRL

$2.42

Description：MOSFET N-CH 100V 28A D2PAK
Series：-
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)

SKU:997e61ca3aa5 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

IRF540STRL is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 100V 28A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRF540STRL

Description：MOSFET N-CH 100V 28A D2PAK
Series：-
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：77mOhm @ 17A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：72 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1700 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：3.7W (Ta), 150W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263 (D2PAK)
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for IRF540STRL

IRF540STRL

Single FETs, MOSFETs Overview

The IRF540STRL is a third-generation N-channel Power MOSFET manufactured by Vishay Siliconix, housed in a D2PAK (TO-263) surface-mount package. It features a drain-source voltage of 100 V and a continuous drain current of 28 A at 25 °C case temperature. The device exhibits a maximum on-resistance of 0.077 Ω at VGS = 10 V and a total gate charge of 72 nC. It supports an operating junction temperature range from -55 °C to +175 °C and includes repetitive avalanche rating capabilities.

Single FETs, MOSFETs Feature Summary

Surface-mount construction in a D2PAK (TO-263) package designed for high-current applications with low internal connection resistance.
Fast switching characteristics combined with ruggedized device design for cost-effective power management.
Repetitive avalanche rated capability allowing operation under inductive load switching conditions.
Halogen-free composition compliant with IEC 61249-2-21 standards.

Single FETs, MOSFETs Applications

High-frequency switching power supplies
Motor drive circuits
Inverter topologies

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix to confirm lead-free status and tape-and-reel packaging configuration. Ensure compatibility with RoHS Directive 2002/95/EC requirements if applicable to your manufacturing process. Confirm that the D2PAK footprint matches your PCB layout specifications before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when a surface-mount solution is required for 100 V applications needing up to 28 A continuous current. Consider the thermal resistance ratings and derating factors for your specific ambient temperature conditions. Verify that the gate charge parameters align with your driver circuit capabilities for optimal switching performance.

Single FETs, MOSFETs Part Context

This part belongs to the IRF540S family of third-generation Power MOSFETs from Vishay Siliconix. These devices are engineered to provide a balance of fast switching speed, low on-resistance, and cost-effectiveness. The D2PAK package allows for higher power capability compared to other existing surface-mount packages.

Single FETs, MOSFETs Replacement Considerations

SiHF540STRR-GE3 is a documented equivalent variant within the same product family offering identical electrical characteristics in a compatible surface-mount package.

Single FETs, MOSFETs FAQ

Is the IRF540STRL rated for repetitive avalanche energy?

Yes, the datasheet specifies that the device is repetitive avalanche rated, with a single pulse avalanche energy of 230 mJ and repetitive avalanche energy of 15 mJ.