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IRF540STRRPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 100V 28A D2PAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IRF540STRRPBF
- Description：MOSFET N-CH 100V 28A D2PAK
- Series：-
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：77mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：72 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1700 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：3.7W (Ta), 150W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263 (D2PAK)
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Single FETs, MOSFETs datasheet and documents for IRF540STRRPBF
Single FETs, MOSFETs Overview
The IRF540STRRPBF is a Vishay Siliconix third-generation N-channel power MOSFET housed in a D2PAK (TO-263) surface-mount package. It features a drain-source voltage of 100 V and a continuous drain current of 28 A at 25 °C case temperature. The device exhibits a maximum on-resistance of 0.077 Ω at VGS = 10 V and a total gate charge of 72 nC. It supports an operating junction temperature range from -55 °C to +175 °C, with a maximum power dissipation of 150 W at 25 °C.
Single FETs, MOSFETs Feature Summary
- Surface-mount construction in a D2PAK (TO-263) package designed for high-current applications
- Fast switching capability combined with ruggedized device design
- Dynamic dv/dt rating and repetitive avalanche rated performance
- Ease of paralleling due to low internal connection resistance
Single FETs, MOSFETs Applications
- High current power switching circuits
- DC-DC converter topologies
- Motor control systems
- Power management modules
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix STRRPBF confirms tape and reel packaging when sourcing components. Confirm RoHS compliance status as applicable to the manufacturing lot. Validate that the component matches the Vishay Siliconix datasheet specifications before integration into final designs.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring robust surface-mount power handling with fast switching characteristics. Ensure adequate thermal management is provided to maintain junction temperatures within the specified limits during operation. Verify drive voltage requirements align with the threshold and gate charge specifications for optimal performance.
Single FETs, MOSFETs Part Context
This part belongs to the IRF540S family of third-generation power MOSFETs from Vishay Siliconix. These devices are engineered to provide a combination of low on-resistance and cost-effectiveness. The D2PAK package allows for higher power capability compared to standard through-hole alternatives while maintaining compatibility with automated surface-mount assembly processes.
Single FETs, MOSFETs Replacement Considerations
Consult official Vishay documentation for verified substitute part numbers. Cross-reference electrical parameters such as breakdown voltage, on-resistance, and package dimensions to ensure functional equivalence without modifying the existing circuit layout or thermal design.
Single FETs, MOSFETs FAQ
What is the maximum repetitive avalanche energy rating?
The device is rated for a single pulse avalanche energy of 230 mJ and a repetitive avalanche energy of 15 mJ.
How does the package support high current applications?
The D2PAK (TO-263) package provides low internal connection resistance and a large thermal pad, enabling it to dissipate up to 150 W of power when mounted on a suitable heatsink.
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