IRF5810

FET, MOSFET Arrays Overview

The IRF5810 is a dual P-channel HEXFET power MOSFET manufactured by Infineon Technologies. It integrates two independent P-channel elements within a single TSOP-6 surface-mount package, featuring built-in diodes for each channel. The device supports a drain-source breakdown voltage of 20V and a continuous drain current of 2.9A. Key electrical characteristics include a maximum on-resistance of 0.09 ohms at Vgs = -4.5V and 0.135 ohms at Vgs = -2.5V. The component operates in enhancement mode with a maximum junction temperature of 150°C.

FET, MOSFET Arrays Feature Summary

• Dual configuration integrating two P-channel MOSFETs with built-in diodes in a compact TSOP-6 package
• Ultra-low on-resistance achieved through advanced processing techniques for efficient silicon area utilization
• Low gate charge design to support high-frequency switching applications
• Surface-mount construction optimized for space-constrained printed circuit board layouts

FET, MOSFET Arrays Applications

• Battery management systems requiring compact dual-channel control
• Load management circuits for portable electronic devices
• DC-DC converter topologies utilizing synchronous rectification
• Power switches in space-limited consumer electronics

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix and RoHS compliance status before procurement, as datasheet records indicate non-compliance with certain environmental directives. Confirm the manufacturer source is Infineon Technologies or authorized distributors. Ensure the TSOP-6 package variant matches the design footprint requirements. Check for moisture sensitivity level classifications relevant to assembly processes.

FET, MOSFET Arrays Selection Notes

Select this component when dual P-channel functionality is required in a minimal footprint. The low on-resistance makes it suitable for efficiency-critical battery-powered applications. Consider the 20V voltage rating and 2.9A current limit against load requirements. The TSOP-6 package offers thermal and mechanical advantages over larger discrete packages for dense PCB designs.

FET, MOSFET Arrays Part Context

The IRF5810 belongs to Infineon's HEXFET family of power MOSFETs, known for high performance and reliability. This specific part represents a dual-channel solution designed to replace multiple discrete components. It utilizes silicon technology optimized for low resistance per unit area, enhancing overall system efficiency in power management applications.

FET, MOSFET Arrays Replacement Considerations

Consult official cross-reference tools for verified substitutes. Ensure replacement parts match the TSOP-6 package, 20V rating, and dual P-channel configuration. Verify that alternative components meet the same on-resistance and current specifications.