IRF5810TR

FET, MOSFET Arrays Overview

The IRF5810TR is a dual P-channel HEXFET power MOSFET manufactured by Infineon Technologies. It integrates two independent P-channel enhancement-mode field-effect transistors within a single TSOP-6 surface-mount package. The device features a drain-source breakdown voltage of 20 V and a continuous drain current rating of 2.9 A. Maximum on-resistance is specified at 90 mΩ with a gate-source voltage of -4.5 V, and 135 mΩ at -2.5 V. The component operates in enhancement mode with a maximum junction temperature of 150 °C.

FET, MOSFET Arrays Feature Summary

• Dual configuration integrating two separate P-channel elements within a compact TSOP-6 package to conserve printed circuit board space.
• Utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area for efficient battery and load management.
• Designed for surface mount applications requiring high functionality and maximum density in limited physical footprints.

FET, MOSFET Arrays Applications

• Battery management systems
• Load management circuits
• Space-constrained surface mount designs

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix against official documentation to confirm tape and reel packaging specifications. Confirm RoHS compliance status as source data indicates non-compliance. Ensure strict adherence to datasheet parameters is required for thermal and electrical validation. Cross-reference manufacturer part numbers to ensure exact functional equivalence.

FET, MOSFET Arrays Selection Notes

Select this component when dual P-channel switching is required in a minimal footprint. Evaluate the 20 V voltage rating and 2.9 A current capacity against circuit requirements. Consider the low gate charge characteristics for efficiency. Verify that the TSOP-6 package aligns with available PCB layout constraints and thermal dissipation needs.

FET, MOSFET Arrays Part Context

This component belongs to the HEXFET Power MOSFET family from Infineon Technologies. It represents a specialized dual-element solution designed to replace discrete components in applications where board real estate is critical. The integration of two dies into one package provides a consolidated switching solution compared to using individual single-channel devices.

FET, MOSFET Arrays Replacement Considerations

Consult official replacement lists for verified substitutes. Generic equivalents may not match the specific dual-channel configuration or TSOP-6 footprint. Verify pinout compatibility and electrical parameter alignment before substitution.