IRF5850TR

FET, MOSFET Arrays Overview

The IRF5850TR is a dual P-channel HEXFET Power MOSFET in a TSOP-6 surface-mount package. It features a drain-source voltage (VDS) of -20 V and a continuous drain current (ID) of -2.2 A at 25°C, reducing to -1.8 A at 70°C. The maximum on-resistance (RDS(on)) is 0.135 Ω at VGS = -4.5 V and -2.2 A. Gate-to-source voltage (VGS) is rated at ±12 V. Total gate charge (Qg) is typically 3.6 nC. Power dissipation is 0.96 W at 25°C with a thermal resistance (RθJA) of 130 °C/W. Operating junction temperature ranges from -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Dual P-channel configuration providing two independent channels within a single compact TSOP-6 footprint.
• Ultra-low on-resistance achieved through advanced processing techniques for efficient power management.
• Low gate charge characteristics enabling fast switching speeds and reduced drive requirements.
• Surface-mount design optimized for applications where printed circuit board space is limited.

FET, MOSFET Arrays Applications

• Battery management systems
• Load management circuits
• Power supply modules

FET, MOSFET Arrays Procurement Notes

Verify the component status as the IRF5850 series may be subject to obsolescence or lifecycle changes. Confirm that the specific TR suffix indicates tape and reel packaging suitable for automated assembly. Ensure compatibility with RoHS directives if required by the target application environment. Cross-reference datasheet revisions to confirm electrical parameters match the production batch specifications.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring dual P-channel isolation in a minimal footprint. Evaluate thermal performance against the 130 °C/W junction-to-ambient resistance for ambient cooling scenarios. Consider the -20 V rating for low-voltage DC bus applications. Verify that the gate threshold voltage aligns with the available logic drive levels for reliable turn-on and turn-off operations under varying temperature conditions.

FET, MOSFET Arrays Part Context

The IRF5850 belongs to the HEXFET Power MOSFET family developed by International Rectifier, now part of Infineon Technologies. This series utilizes specialized silicon processing to minimize on-resistance per unit area. The TSOP-6 package integrates two dies, offering functionality comparable to separate SOT-23 packages while occupying less board space. It represents a solution for high-density power electronics design.

FET, MOSFET Arrays Replacement Considerations

Consult official manufacturer substitution lists for verified equivalents. Generic cross-references may not guarantee identical pinout or thermal characteristics.