IRF5850TRPBF

FET, MOSFET Arrays Overview

The IRF5850TRPBF is a dual P-channel HEXFET Power MOSFET manufactured by Infineon Technologies. It features an ultra-low on-resistance of 0.135Ω at VGS = -4.5V and ID = -2.2A, with a maximum drain-source voltage (VDS) of -20V. The device supports a continuous drain current of -2.2A at 25°C and handles a pulsed current of -9.0A. Packaged in a TSOP-6 surface mount format, it integrates two independent dies within a single compact footprint to optimize printed circuit board space while maintaining high thermal efficiency.

FET, MOSFET Arrays Feature Summary

• Dual P-channel configuration providing two independent switches in a single package
• Ultra-low on-resistance per silicon area for improved power efficiency
• Low gate charge characteristics suitable for fast switching applications
• TSOP-6 surface mount package designed for space-constrained designs

FET, MOSFET Arrays Applications

• Battery management systems
• Load management circuits
• High-side switch applications
• DC/DC converter topologies

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix TRPBF indicates tape and reel packaging when sourcing components. Confirm that the manufacturer designation aligns with Infineon Technologies following the acquisition of International Rectifier assets. Ensure the component meets lead-free and halogen-free requirements as specified in the official datasheet documentation before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring dual P-channel switching within a minimal footprint. The low on-resistance minimizes conduction losses, making it efficient for battery-powered devices. Evaluate the thermal resistance parameters against the expected ambient temperature and duty cycle to ensure junction temperatures remain within the specified operating range during continuous operation.

FET, MOSFET Arrays Part Context

This component belongs to the HEXFET family of power MOSFETs from Infineon Technologies. It utilizes advanced processing techniques to achieve low on-resistance relative to its physical size. The TSOP-6 package allows designers to replace two separate SOT-23 packages, reducing board space requirements while maintaining comparable current handling capabilities through optimized thermal design.

FET, MOSFET Arrays Replacement Considerations

Consult official replacement lists for equivalent dual P-channel MOSFETs with matching voltage ratings and package dimensions.