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IRF5852TR is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 20V 2.7A 6TSOP. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for IRF5852TR
- Description：MOSFET 2N-CH 20V 2.7A 6TSOP
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：2.7A
- Rds On (Max) @ Id, Vgs：90mOhm @ 2.7A, 4.5V
- Vgs(th) (Max) @ Id：1.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：400pF @ 15V
- Power - Max：960mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：6-TSOP
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for IRF5852TR
FET, MOSFET Arrays Overview
The IRF5852TR is a dual N-channel MOSFET from International Rectifier, now part of Infineon Technologies. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area, providing high efficiency for battery and load management applications. The device is housed in a Dual TSOP-6 surface-mount package, which offers the functionality of two SOT-23 packages in a smaller footprint. This unique thermal design and RDS(on) reduction enable increased current-handling capability.
FET, MOSFET Arrays Feature Summary
- Dual N-channel configuration within a single compact package
- Ultra-low on-resistance achieved through advanced processing techniques
- Optimized thermal design for enhanced current handling
FET, MOSFET Arrays Applications
- Battery management systems
- Load management applications
- Space-constrained printed circuit board designs
FET, MOSFET Arrays Procurement Notes
Verify the manufacturer designation as International Rectifier or Infineon Technologies depending on the production era. Confirm the specific suffix TR indicates tape and reel packaging. Ensure the component matches the Dual TSOP-6 package outline and pinout specifications found in the official datasheet before integration into the design.
FET, MOSFET Arrays Selection Notes
Select this component when space is limited and dual switch functionality is required. The Dual TSOP-6 package replaces two separate SOT-23 devices. Consider the ultra-low on-resistance for efficiency requirements in battery and load management circuits. Verify that the voltage and current ratings meet the specific application demands.
FET, MOSFET Arrays Part Context
This component belongs to the family of power MOSFETs designed for high-efficiency switching. It represents the transition period where International Rectifier products were integrated into Infineon's portfolio. The technology focuses on minimizing silicon area resistance while maintaining robust thermal performance in small surface-mount packages.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
