IRF614S

$1.43

Description：MOSFET N-CH 250V 2.7A D2PAK
Series：-
Mfr：Vishay Siliconix
Package：Tube

SKU:7597c501240b Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

IRF614S is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 250V 2.7A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRF614S

Description：MOSFET N-CH 250V 2.7A D2PAK
Series：-
Mfr：Vishay Siliconix
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：250 V
Current - Continuous Drain (Id) @ 25°C：2.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：2Ohm @ 1.6A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：8.2 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：140 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：3.1W (Ta), 36W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263 (D2PAK)
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for IRF614S

IRF614S

Single FETs, MOSFETs Overview

The IRF614S is a third-generation N-channel power MOSFET from Vishay Siliconix, housed in a D2PAK (TO-263) surface-mount package. It features a drain-source voltage of 250 V and a maximum on-resistance of 2.0 Ω at VGS = 10 V. The device supports a continuous drain current of 2.7 A at 25 °C case temperature and handles an 8.0 A pulsed current. Key dynamic parameters include a total gate charge of 8.2 nC and a peak diode recovery dv/dt rating of 4.8 V/ns.

Single FETs, MOSFETs Feature Summary

Surface-mount construction in a D2PAK (TO-263) package for high current applications
Fast switching capability with low gate charge characteristics
Ruggedized design featuring repetitive avalanche rating
High peak diode recovery dv/dt rating

Single FETs, MOSFETs Applications

High current switching circuits
DC-DC converters
Power factor correction circuits
Motor control applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix to confirm compliance status. Suffixes such as -GE3 indicate lead-free and halogen-free components, while PbF variants are lead-free but may not be halogen-free. Confirm RoHS compliance requirements against the datasheet tables before procurement to ensure alignment with environmental regulations.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a 250 V breakdown voltage in a surface-mount format. Ensure thermal management accounts for the 36 W dissipation limit at 25 °C case temperature. Verify that the application's gate drive voltage meets the 10 V threshold for optimal on-resistance performance.

Single FETs, MOSFETs Part Context

This part belongs to the IRF614 series of third-generation power MOSFETs. While the standard IRF614 uses a through-hole TO-220AB package, the IRF614S variant utilizes the D2PAK (TO-263) surface-mount package. Both share identical electrical specifications but differ in physical mounting and thermal dissipation characteristics.