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IRF630A_CP001 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Fairchild Semiconductor. Its product description is MOSFET N-CH 200V. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for IRF630A_CP001
- Description：MOSFET N-CH 200V
- Series：*
- Mfr：Fairchild Semiconductor
- Package：Bulk
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for IRF630A_CP001
FET, MOSFET Arrays Overview
The Fairchild Semiconductor IRF630A_CP001 is an N-channel Power MOSFET belonging to the third-generation HEXFET family. It features a 200V drain-source voltage rating and a continuous drain current of 9A. The device exhibits a maximum on-resistance of 0.4 ohms at 25°C. Packaged in a TO-220AB flange mount configuration, it utilizes silicon metal-oxide semiconductor technology. Key electrical characteristics include a gate threshold voltage of 2V at 250µA and a total gate charge of 27nC at 5V. The component supports junction temperatures up to 150°C and includes avalanche energy ratings of 250mJ.
FET, MOSFET Arrays Feature Summary
- Third-generation HEXFET design for optimized switching performance
- Ruggedized device structure with dynamic dV/dt rating
- Repetitive avalanche rated capability for robust operation
- Simple drive requirements facilitating ease of use
FET, MOSFET Arrays Applications
- High-frequency power switching circuits
- DC-DC converter topologies
- Motor control applications requiring N-channel switching
- General-purpose power management systems
FET, MOSFET Arrays Procurement Notes
Verify the specific suffix CP001 against official Fairchild or onsemi documentation, as standard listings typically use IRF630A. Confirm RoHS compliance status and manufacturing origin. Ensure the supplier provides valid traceability for the TO-220AB package. Cross-reference datasheet revisions to confirm parameter consistency with the requested part number.
FET, MOSFET Arrays Selection Notes
Select this component for applications requiring 200V blocking capability and 9A continuous current handling. The 0.4 ohm on-resistance balances conduction losses with switching speed. Consider the TO-220AB package for adequate thermal dissipation without active cooling in moderate loads. Verify gate drive compatibility with the 2V threshold and 27nC charge requirements.
FET, MOSFET Arrays Part Context
This part belongs to the IRF630 series of N-channel power MOSFETs originally developed by International Rectifier and later maintained by Fairchild Semiconductor, now onsemi. The series is known for combining low on-resistance with fast switching speeds. The IRF630A variant specifically denotes the 200V/9A/0.4ohm specification within the broader HEXFET lineup.
FET, MOSFET Arrays Replacement Considerations
Direct substitutes include the generic IRF630A from various manufacturers such as STMicroelectronics or Vishay. Verify pinout compatibility and thermal resistance values when replacing. Ensure the replacement maintains the same TO-220AB footprint and electrical ratings.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
