IRF634PBF

$1.42

Description：MOSFET N-CH 250V 8.1A TO220AB
Series：-
Mfr：Vishay Siliconix
Package：Tube

SKU:162f7ef431ec Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

IRF634PBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 250V 8.1A TO220AB. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRF634PBF

Description：MOSFET N-CH 250V 8.1A TO220AB
Series：-
Mfr：Vishay Siliconix
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：250 V
Current - Continuous Drain (Id) @ 25°C：8.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：450mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：41 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：770 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：74W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for IRF634PBF

IRF634PBF

Single FETs, MOSFETs Overview

The IRF634PBF is a Vishay Siliconix N-Channel Power MOSFET in a TO-220AB package. It features a 250 V drain-source voltage, 8.1 A continuous drain current at 25 °C case temperature, and a maximum on-resistance of 0.45 Ω at 10 V gate drive. The device has a total gate charge of 41 nC, supports repetitive avalanche energy up to 300 mJ, and operates within a junction temperature range of -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

Third-generation power MOSFET design providing fast switching capabilities and ruggedized device construction.
Repetitive avalanche rated for handling unclamped inductive switching events.
Includes dynamic dV/dt rating to manage rapid voltage transitions during body diode recovery.

Single FETs, MOSFETs Applications

Commercial-industrial applications requiring moderate power dissipation levels.
Switching circuits utilizing the integral reverse p-n junction body diode.
Unclamped inductive load switching environments.

Single FETs, MOSFETs Procurement Notes

Verify RoHS compliance status as the datasheet covers both compliant and non-compliant variants. Confirm lead-free terminations match the PBF suffix designation. Validate that the TO-220AB package dimensions align with the target PCB footprint requirements before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when a 250 V breakdown voltage and 0.45 Ω on-resistance are required. Ensure thermal management accommodates the 74 W maximum power dissipation at 25 °C case temperature. Verify that the 10 V gate drive level matches the system control logic for optimal conduction performance.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay IRF series of third-generation power MOSFETs. It utilizes silicon technology and is housed in the widely adopted TO-220AB through-hole package. The product line emphasizes cost-effectiveness combined with low on-resistance and ease of paralleling for higher current applications.

Single FETs, MOSFETs Replacement Considerations

The IRF634PBF serves as a direct replacement for the legacy IRF634 part number. Both components share identical electrical specifications and the TO-220AB package form factor, allowing for drop-in substitution in existing designs without circuit modification.