IRF640LPBF

$1.09

Description：MOSFET N-CH 200V 18A TO262-3
Series：-
Mfr：Vishay Siliconix
Package：Tube

SKU:c005cb90e57c Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

IRF640LPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 200V 18A TO262-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRF640LPBF

Description：MOSFET N-CH 200V 18A TO262-3
Series：-
Mfr：Vishay Siliconix
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：200 V
Current - Continuous Drain (Id) @ 25°C：18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：70 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1300 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：3.1W (Ta), 130W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-262-3
Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA

Single FETs, MOSFETs datasheet and documents for IRF640LPBF

IRF640LPBF

Single FETs, MOSFETs Overview

The IRF640LPBF is a third-generation N-channel power MOSFET from Vishay Siliconix, housed in a low-profile through-hole I2PAK (TO-262) package. It features a drain-source voltage of 200 V and a continuous drain current of 18 A at 25 °C case temperature. The device exhibits a maximum on-resistance of 0.18 Ω at VGS = 10 V and a total gate charge of 70 nC. It supports an operating junction temperature up to 150 °C and includes dynamic dV/dt ratings with fully avalanche-rated ruggedness.

Single FETs, MOSFETs Feature Summary

Low-profile through-hole construction suitable for compact applications
Fast switching performance combined with ruggedized device design
Fully avalanche rated for robust operation under inductive loads

Single FETs, MOSFETs Applications

High current surface mount and through-hole power circuits
Power management systems requiring low internal connection resistance
Applications utilizing the D2PAK or I2PAK package form factors

Single FETs, MOSFETs Procurement Notes

Verify that the specific ordering suffix corresponds to the required lead finish and packaging format. Confirm RoHS compliance status as datasheets may cover both compliant and non-compliant variants. Ensure the selected part matches the intended thermal dissipation requirements for the target application environment.

Single FETs, MOSFETs Selection Notes

Select this component when a low-profile through-hole configuration is preferred over standard surface mount packages. Consider the 0.18 Ω on-resistance and 18 A current capability for general-purpose switching needs. Evaluate the thermal impedance characteristics against the specific PCB layout and cooling constraints of the design.

Single FETs, MOSFETs Part Context

This device belongs to the IRF640S family, which encompasses surface mount D2PAK and low-profile through-hole I2PAK versions. The series represents Vishay's third-generation power MOSFET technology, designed to balance fast switching speeds with low on-resistance for cost-effective power solutions.