IRF644STRLPBF

$4.00

Description：MOSFET N-CH 250V 14A D2PAK
Series：-
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:5a838f0d1dd6 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

IRF644STRLPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 250V 14A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRF644STRLPBF

Description：MOSFET N-CH 250V 14A D2PAK
Series：-
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：250 V
Current - Continuous Drain (Id) @ 25°C：14A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：280mOhm @ 8.4A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：68 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1300 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：3.1W (Ta), 125W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263 (D2PAK)
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for IRF644STRLPBF

IRF644STRLPBF

Single FETs, MOSFETs Overview

The IRF644STRLPBF is a Vishay Siliconix third-generation N-channel power MOSFET housed in a D2PAK (TO-263) surface-mount package. It features a drain-source voltage of 250 V and a continuous drain current of 14 A at 25 °C case temperature. The device exhibits a maximum on-resistance of 0.28 Ω at VGS = 10 V, with a total gate charge of 68 nC. It supports repetitive avalanche energy ratings up to 550 mJ and operates within a junction temperature range of -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

Surface-mount construction in a D2PAK (TO-263) package designed for high-current applications
Fast switching characteristics combined with low on-resistance for cost-effective performance
Repetitive avalanche rated capability for ruggedized device design
Dynamic dv/dt rating suitable for demanding switching environments

Single FETs, MOSFETs Applications

High current power switching circuits
DC-DC converter topologies
Motor control systems requiring fast switching

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official Vishay documentation to confirm lead-free status and tape-and-reel packaging configuration. Ensure that the component meets RoHS compliance requirements relevant to your manufacturing process. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability before procurement.

Single FETs, MOSFETs Selection Notes

Select this component when a surface-mount N-channel MOSFET with 250 V breakdown voltage is required. The D2PAK package offers lower thermal resistance compared to standard through-hole options while maintaining high current handling capabilities. Consider the 0.28 Ω on-resistance and 68 nC gate charge for efficiency and drive circuit compatibility in medium-power switching designs.

Single FETs, MOSFETs Part Context

This part belongs to the IRF644S/SiHF644S family of third-generation power MOSFETs from Vishay Siliconix. These devices are engineered to provide an optimal balance of switching speed, conduction losses, and ruggedness. The family utilizes silicon technology optimized for high-voltage power applications, offering designers improved performance over previous generations in compact surface-mount form factors.