IRF7101PBF

FET, MOSFET Arrays Overview

The IRF7101PBF is a dual N-channel HEXFET power MOSFET in an SO-8 package. It features a drain-source voltage of 20 V and a continuous drain current of 5.3 A at 25°C, or 4.9 A at 70°C. The maximum on-resistance is 0.10 Ω at VGS = 10 V and 0.18 Ω at VGS = 4.5 V. Total gate charge is typically 13 nC at VGS = 10 V. Power dissipation reaches 2.0 W at 25°C with a thermal resistance (junction-to-ambient) of 62.5 °C/W. Operating temperature ranges from -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration for efficient load management
• Ultra-low on-resistance per silicon area
• Fast switching speed with ruggedized device design
• Dynamic dv/dt rating capability

FET, MOSFET Arrays Applications

• Battery and load management applications
• Motor control circuits
• Power supply output stages

FET, MOSFET Arrays Procurement Notes

Verify the component origin carefully as Infineon acquired International Rectifier. Confirm the datasheet version matches the specific manufacturing lot. Ensure the SO-8 package dimensions align with your PCB footprint requirements. Check for lead-free compliance markings on the package surface.

FET, MOSFET Arrays Selection Notes

Select this part for low-voltage, high-current synchronous rectification where compact size is critical. The dual channel allows cost reduction by sharing common nodes. Evaluate thermal performance under pulsed conditions using the provided ZthJA curves. Ensure gate drive voltage supports the specified RDS(on) thresholds.

FET, MOSFET Arrays Part Context

This component belongs to the fourth-generation HEXFET family from International Rectifier, now part of Infineon Technologies. These devices utilize advanced trench technology to minimize on-resistance. The SO-8 package provides a compact solution for surface-mount assembly, suitable for consumer electronics and industrial applications requiring efficient power switching.

FET, MOSFET Arrays Replacement Considerations

IRF7101TRPBF: Identical electrical specifications and pinout; differs only in tape-and-reel packaging format instead of tube.

FET, MOSFET Arrays FAQ

What is the typical gate charge value?

The total gate charge (Qg) is typically 13 nC when measured at a gate-source voltage of 10 V.

How does the package support thermal management?

The SO-8 package offers a junction-to-ambient thermal resistance of 62.5 °C/W, allowing heat dissipation through the exposed pad and leads.

Is the body diode characterized for reverse recovery?

Yes, the datasheet includes specific test circuits and parameters for dynamic dv/dt rating and body diode forward recovery characteristics.