IRF7101TRPBF

FET, MOSFET Arrays Overview

The IRF7101TRPBF is a dual N-channel power MOSFET from Infineon Technologies, utilizing fourth-generation HEXFET process technology. It features an SO-8 surface-mount package with two independent channels. Key electrical parameters include a drain-source breakdown voltage of 50 V and a continuous drain current of 3 A at 25°C. The device exhibits a maximum on-resistance of 130 mΩ at Vgs=10V and 200 mΩ at Vgs=4.5V. Gate threshold voltage ranges from 1 V to 3 V. Total gate charge is typically 12 nC at 10 V. Operating temperature spans from -55°C to +150°C junction temperature.

FET, MOSFET Arrays Feature Summary

• Fourth-generation HEXFET processing for low on-resistance per silicon area
• Dual N-channel configuration in a compact SO-8 package
• Fast switching speed and ruggedized device design
• Dynamic dv/dt rating capability

FET, MOSFET Arrays Applications

• DC-DC converters
• Power management circuits
• General-purpose switching applications

FET, MOSFET Arrays Procurement Notes

Verify the component matches the exact part number IRF7101TRPBF. Confirm the manufacturer is Infineon Technologies or authorized licensee. Check datasheet revisions for any parameter updates. Ensure the package type is SO-8. Validate RoHS compliance status if required by your assembly process. Cross-reference ordering suffixes with official documentation.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring dual N-channel switching in a small footprint. Consider the 50 V voltage rating and 3 A current capacity against circuit demands. Evaluate thermal performance using the specified RthJA and power dissipation limits. Compare on-resistance values at expected gate drive voltages. Assess switching speed requirements against the typical gate charge and delay times provided.

FET, MOSFET Arrays Part Context

This component belongs to the HEXFET Power MOSFET family from Infineon Technologies. It represents an evolution of International Rectifier's power transistor designs acquired by Infineon. The SO-8 package provides a balance between power handling and board space efficiency for consumer and industrial electronics.

FET, MOSFET Arrays Replacement Considerations

Check for direct pin-compatible alternatives within the same HEXFET series. Verify that substitute parts meet or exceed the 50 V Vds and 3 A Id specifications. Ensure replacement devices offer comparable Rds(on) and switching characteristics. Confirm package compatibility and thermal resistance values.