IRF7103PBF

FET, MOSFET Arrays Overview

The IRF7103PBF is a dual N-channel HEXFET power MOSFET housed in an SO-8 package. It features a maximum drain-source voltage of 50V and a continuous drain current of 3A at 25°C. The device exhibits a maximum on-resistance of 130mΩ at 10V gate drive and 200mΩ at 4.5V. Key switching parameters include a typical gate charge of 12nC at 10V and a typical gate-drain charge of 3.5nC. Thermal performance is defined by a maximum junction temperature of 150°C and a thermal resistance from junction to ambient of 62.5 K/W.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration within a single surface-mount package for space-efficient circuit design
• Ultra-low on-resistance achieved through advanced planar HEXFET process technology
• Fast switching characteristics with optimized dynamic dv/dt rating
• Lead-free construction compliant with RoHS standards

FET, MOSFET Arrays Applications

• DC-DC converter circuits requiring low profile packaging
• Power management systems utilizing synchronous rectification
• Load switching applications for low-voltage digital logic

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix against official Infineon documentation to confirm package type and tape/reel specifications. Ensure the component meets required automotive or industrial qualification standards if applicable. Cross-reference part numbers carefully as suffixes may indicate variations in packaging or testing criteria that do not alter electrical function.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring dual N-channel isolation in a compact footprint. Evaluate thermal constraints based on the specified junction-to-ambient resistance. Confirm gate drive voltage levels align with the threshold requirements for optimal on-resistance performance. Consider the 50V breakdown limit when designing for transient voltage spikes.

FET, MOSFET Arrays Part Context

This device belongs to the IRF710x series of dual MOSFETs, designed for high-efficiency power conversion. It utilizes Infineon's HEXFET technology to minimize conduction losses. The SO-8 package provides enhanced thermal dissipation compared to standard variants, supporting higher current densities in constrained board areas.

FET, MOSFET Arrays Replacement Considerations

Consult official cross-reference tools for verified substitutes. Ensure replacement parts match the dual N-channel topology and SO-8 pinout compatibility.