IRF7103QTRPBF

FET, MOSFET Arrays Overview

The IRF7103QTRPBF is a dual N-channel HEXFET power MOSFET in an SO-8 package. It features a drain-source breakdown voltage of 50V and a continuous drain current of 3A at 25°C. The maximum on-resistance is 130mΩ at VGS=10V and 200mΩ at VGS=4.5V. Operating junction temperature reaches 175°C with repetitive avalanche capability.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration within a single surface-mount package
• Advanced processing for ultra-low on-resistance per silicon area
• Repetitive avalanche rating allowed up to maximum junction temperature
• Enhanced thermal characteristics via efficient SO-8 design

FET, MOSFET Arrays Applications

• Power management circuits requiring compact dual-switch solutions
• DC-DC converters utilizing low-profile surface mount technology
• Industrial applications demanding high reliability and thermal stability

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix QTRPBF against official Infineon documentation to confirm automotive qualification status and tape-and-reel packaging specifications. Ensure the ordering part number matches the exact electrical ratings and package outline required for your design implementation.

FET, MOSFET Arrays Selection Notes

Select this component for designs needing two isolated N-channel switches in minimal board space. Evaluate the 130mΩ on-resistance against load requirements at 10V gate drive. Consider the 175°C operating limit for high-temperature environments and verify avalanche energy requirements against the provided safe operating area curves.

FET, MOSFET Arrays Part Context

This device belongs to the HEXFET family, known for robust power switching capabilities. The IRF7103 variant specifically integrates two channels in an SO-8 footprint, distinguishing it from single-channel counterparts. It utilizes silicon planar technology optimized for low conduction losses and fast switching performance.

FET, MOSFET Arrays Replacement Considerations

Consult official cross-reference tools for verified substitutes. Ensure any replacement maintains the 50V rating, dual N-channel topology, and SO-8 pinout compatibility without altering thermal or electrical performance boundaries.

FET, MOSFET Arrays FAQ

Is the IRF7103QTRPBF capable of handling repetitive avalanche conditions?

Yes, the datasheet specifies that repetitive avalanche is allowed up to the maximum junction temperature (Tjmax).

What is the maximum operating junction temperature for this device?

The maximum operating junction temperature is 175°C.

How does the on-resistance vary with gate-source voltage?

The maximum on-resistance is specified as 130mΩ at VGS=10V and increases to 200mΩ at VGS=4.5V.