FET, MOSFET Arrays IRF7104TR product image

IRF7104TR

$0.81
  • Description:MOSFET 2P-CH 30V 2.3A 8SOP
  • Series:-

SKU:f0618bf25522 Category: Brand:

  
  • Quantity
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IRF7104TR is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists UMW. Its product description is MOSFET 2P-CH 30V 2.3A 8SOP. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRF7104TR

  • Description:MOSFET 2P-CH 30V 2.3A 8SOP
  • Series:-
  • Mfr:UMW
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel
  • FET Feature:-
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:2.3A (Ta)
  • Rds On (Max) @ Id, Vgs:250mOhm @ 1A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:290pF @ 15V
  • Power - Max:2W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOP
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for IRF7104TR

IRF7104TR

FET, MOSFET Arrays Overview

The IRF7104TR is a dual P-channel MOSFET manufactured by UMW, housed in an SOP-8 surface-mount package. It features a drain-source voltage (Vdss) of -30V and a continuous drain current (Id) of -2.3A at 25°C. The device exhibits ultra-low on-resistance, specified as less than 250mΩ at Vgs=-10V and less than 400mΩ at Vgs=-4.5V. Key electrical parameters include a maximum gate threshold voltage of -1V at Id=-250µA, a total gate charge (Qg) of 5.71nC at Vgs=-10V, and an input capacitance (Ciss) of 290pF at Vds=0V. Thermal resistance from junction to ambient is rated at 62°C/W.

FET, MOSFET Arrays Feature Summary

  • Dual configuration integrating two independent P-channel MOSFETs within a single compact package for space-efficient circuit design.
  • Ultra-low on-resistance characteristics optimized for high efficiency and reduced power dissipation during conduction.
  • Fast switching capabilities supported by low gate charge values, suitable for high-frequency operation.
  • Logic-level compatibility allowing direct drive from standard logic outputs with Vgs thresholds as low as -1V.

FET, MOSFET Arrays Applications

  • Power management circuits requiring efficient load switching.
  • Battery protection modules utilizing dual-channel control.
  • DC-DC converter output stages for synchronous rectification.
  • Motor driver interfaces for controlling DC motor direction and speed.

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer designation matches UMW or UT D Semiconductor Co., Limited when sourcing this component. Confirm the package type is SOP-8 and the ordering suffix indicates tape and reel delivery. Ensure the datasheet version aligns with the specific batch requirements for your design implementation.

FET, MOSFET Arrays Selection Notes

Select this component when a dual P-channel configuration is required within a limited board area. The -30V rating and -2.3A current capacity suit low-voltage applications. Consider the thermal resistance of 62°C/W for heat dissipation planning. Verify that the logic level drive capability meets the controller's output voltage specifications.

FET, MOSFET Arrays Part Context

This component belongs to the family of dual P-channel MOSFETs designed for surface-mount assembly. It serves as an alternative to discrete single-channel solutions, reducing component count. The SOP-8 package provides a balance between thermal performance and footprint size for consumer and industrial electronics.

FET, MOSFET Arrays Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Cross-referencing requires matching the -30V Vdss, -2.3A Id, and SOP-8 package constraints. Verify pinout compatibility before substitution.

IRF7104TRIRF7104TR
$0.81
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