IRF7105QTRPBF

Description：MOSFET N/P-CH 25V 3.5A/2.3A 8SO
Series：-

SKU:abf08a9bdf28 Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

IRF7105QTRPBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N/P-CH 25V 3.5A/2.3A 8SO. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRF7105QTRPBF

Description：MOSFET N/P-CH 25V 3.5A/2.3A 8SO
Series：-
Mfr：Infineon Technologies
Package：Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：25V
Current - Continuous Drain (Id) @ 25°C：3.5A, 2.3A
Rds On (Max) @ Id, Vgs：100mOhm @ 1A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：330pF @ 15V
Power - Max：2W
Operating Temperature：-
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SO
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for IRF7105QTRPBF

IRF7105QTRPBF

FET, MOSFET Arrays Overview

The IRF7105QTRPBF is a dual HEXFET Power MOSFET in an SO-8 package, integrating one N-channel and one P-channel enhancement-mode device. The N-channel unit features a maximum drain-source voltage of 20 V, continuous drain current of 3.5 A, and on-resistance of 48 mΩ at VGS=10V. The P-channel unit offers 20 V breakdown, 2.3 A current capability, and 96 mΩ on-resistance at VGS=-10V. Both channels support a junction temperature up to 150°C.

FET, MOSFET Arrays Feature Summary

Dual N and P channel configuration within a single surface mount package
Advanced process technology achieving ultra-low on-resistance per silicon area
Fast switching speed with improved repetitive avalanche rating

FET, MOSFET Arrays Applications

Surface mount power applications requiring board space reduction
Low voltage DC/DC converter synchronous rectification
Power management circuits utilizing efficient thermal characteristics

FET, MOSFET Arrays Procurement Notes

Verify the specific Q suffix against official Infineon documentation to confirm automotive or qualified status requirements. Confirm that the SO-8 tape and reel packaging matches the intended automated assembly line specifications. Ensure the component meets all RoHS compliance standards required for the target manufacturing environment.

FET, MOSFET Arrays Selection Notes

Select this component when a compact dual MOSFET solution is needed for low-voltage power stages. The integrated N and P channels simplify layout compared to discrete components. Evaluate the thermal resistance and current ratings against the specific load requirements to ensure operation remains within the 150°C junction temperature limit during peak loads.

FET, MOSFET Arrays Part Context

This part belongs to the HEXFET family from Infineon Technologies, known for advanced processing techniques. It utilizes the SO-8 surface mount package to provide enhanced thermal characteristics. The design combines dual MOSFET die capability with industry-standard pinouts to facilitate efficient implementation in various power electronic designs.