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IRF7105TR is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists UMW. Its product description is MOSFET N/P-CH 25V 3.5A 8SOP. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for IRF7105TR
- Description：MOSFET N/P-CH 25V 3.5A 8SOP
- Series：-
- Mfr：UMW
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：25V
- Current - Continuous Drain (Id) @ 25°C：3.5A (Ta), 2.3A (Ta)
- Rds On (Max) @ Id, Vgs：100mOhm @ 1A, 10V, 250mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：27nC @ 10V, 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：330pF @ 15V, 290pF @ 15V
- Power - Max：2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOP
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for IRF7105TR
FET, MOSFET Arrays Overview
The UMW IRF7105TR is a dual N-channel and P-channel MOSFET housed in an SOP-8 package. It features ultra-low on-resistance for efficient power dissipation. The N-channel device has a drain-source voltage of 25V, with an on-resistance of 100mΩ at VGS=10V and 160mΩ at VGS=4.5V. The P-channel device offers a drain-source voltage of -25V, with an on-resistance of 250mΩ at VGS=-10V and 400mΩ at VGS=-4.5V. Both channels support fast switching and dynamic dv/dt ratings.
FET, MOSFET Arrays Feature Summary
- Dual N and P channel configuration in a single surface mount package
- Ultra-low on-resistance for improved efficiency
- Fast switching capability with dynamic dv/dt rating
- Lead-free construction compatible with standard soldering techniques
FET, MOSFET Arrays Applications
- Power management circuits requiring compact dual-channel solutions
- Battery protection boards
- Motor control applications
FET, MOSFET Arrays Procurement Notes
Verify the component authenticity by checking the marking code against the official datasheet specifications. Confirm the package type is SOP-8 and the ordering suffix matches TR for tape and reel delivery. Ensure the manufacturer identification aligns with UMT Semiconductor Co., Limited documentation to avoid counterfeit parts.
FET, MOSFET Arrays Selection Notes
Select this component when space-constrained designs require both N-channel and P-channel switching capabilities. The low on-resistance values make it suitable for low-voltage power distribution. Verify that the required gate drive voltages of 4.5V or 10V are available for optimal performance.
FET, MOSFET Arrays Part Context
This part belongs to the IRF7105 series of dual MOSFETs. It integrates two independent transistors into one footprint to reduce board area. The SOP-8 package provides enhanced thermal characteristics compared to standard variants, supporting vapor phase, infrared, or wave soldering processes.
FET, MOSFET Arrays Replacement Considerations
Check pinout compatibility before substituting. Verify that replacement devices match the 25V/ -25V voltage ratings and similar on-resistance thresholds. Ensure the replacement package is SOP-8 to fit existing footprints.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
