FET, MOSFET Arrays IRF7301PBF product image

IRF7301PBF

  • Description:MOSFET 2N-CH 20V 5.2A 8SO
  • Series:HEXFET®

SKU:ca6b28e74f25 Category: Brand:

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IRF7301PBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 20V 5.2A 8SO. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRF7301PBF

  • Description:MOSFET 2N-CH 20V 5.2A 8SO
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:5.2A
  • Rds On (Max) @ Id, Vgs:50mOhm @ 2.6A, 4.5V
  • Vgs(th) (Max) @ Id:700mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:20nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:660pF @ 15V
  • Power - Max:2W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SO
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for IRF7301PBF

IRF7301PBF

FET, MOSFET Arrays Overview

The IRF7301PBF is a dual N-channel HEXFET power MOSFET manufactured by Infineon Technologies, housed in an SO-8 surface-mount package. It features a maximum drain-source voltage of 20 V and a continuous drain current of 5.7 A at 25°C. The device exhibits a maximum on-resistance of 50 mΩ at 4.5 V gate drive, with typical gate charges of 5.3 nC for Qgd and 13.3 nC for Qg at 4.5 V. Thermal performance includes a junction-to-ambient thermal resistance of 62.5 K/W, supporting operation up to a maximum junction temperature of 150°C.

FET, MOSFET Arrays Feature Summary

  • Dual N-channel configuration within a compact SO-8 package
  • HEXFET technology optimized for low on-resistance and fast switching
  • Logic-level gate threshold enabling efficient drive from standard logic voltages

FET, MOSFET Arrays Applications

  • Motor control circuits
  • Switching mode power supplies (SMPS)

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix against official Infineon documentation to confirm lead-free status and RoHS compliance. Confirm that the part number corresponds to the exact electrical specifications required for the target application, as minor variations may exist across different manufacturing revisions or regional designations.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring a dual N-channel solution in a small form factor. Ensure the operating voltage remains below the 20 V limit and verify that the thermal management strategy can handle the specified power dissipation and thermal resistance characteristics under expected load conditions.

FET, MOSFET Arrays Part Context

This component belongs to the HEXFET family of power MOSFETs, designed for high-efficiency power switching. The IRF7301 series provides integrated dual channels to save board space compared to discrete single-channel alternatives, making it suitable for dense PCB layouts in consumer and industrial electronics.

FET, MOSFET Arrays Replacement Considerations

Consult official cross-reference tools for verified substitutes. Ensure any replacement matches the SO-8 package, 20 V rating, and dual N-channel configuration without altering circuit functionality.

IRF7301PBFIRF7301PBF

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