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IRF7301TRPBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 20V 5.2A 8SO. Review the specifications below when checking this part for your BOM.
The IRF7301TRPBF is a dual N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It utilizes planar strip technology to achieve low on-resistance and fast switching speeds. The device is housed in an SO-8 surface-mount package, providing high current density and efficient thermal performance. Key electrical parameters include a drain-source voltage of 20 V, a continuous drain current of 5.7 A at 25°C, and a maximum on-state resistance of 50 mΩ at 4.5 V gate drive. The component supports junction temperatures up to 150°C and features a typical gate charge of 13.3 nC.
Verify the exact ordering part number against the manufacturer's official datasheet to ensure compatibility with required packaging options such as tape and reel quantities. Confirm that the specified voltage and current ratings align with the target application's operational limits before finalizing procurement decisions.
Select this component when a dual N-channel solution is required in an SO-8 footprint. Ensure the gate drive voltage meets the minimum threshold for optimal Rds(on) performance. Consider the thermal dissipation requirements given the 2 W power rating at 25°C ambient temperature.
This component belongs to Infineon's HEXFET family, known for high-efficiency power switching applications. The IRF7301 series offers a balance of low on-resistance and robust switching performance, suitable for various consumer and industrial electronics requiring reliable power management in compact form factors.
Check for direct cross-reference part numbers from Infineon or other manufacturers offering identical pinouts and electrical specifications. Verify that any substitute maintains the same SO-8 package dimensions and thermal characteristics to ensure board compatibility.
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