FET, MOSFET Arrays IRF7301TRPBF product image

IRF7301TRPBF

$0.71
  • Description:MOSFET 2N-CH 20V 5.2A 8SO
  • Series:HEXFET®

SKU:2772a0094027 Category: Brand:

  
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IRF7301TRPBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 20V 5.2A 8SO. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRF7301TRPBF

  • Description:MOSFET 2N-CH 20V 5.2A 8SO
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:5.2A
  • Rds On (Max) @ Id, Vgs:50mOhm @ 2.6A, 4.5V
  • Vgs(th) (Max) @ Id:700mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:20nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:660pF @ 15V
  • Power - Max:2W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SO
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for IRF7301TRPBF

IRF7301TRPBF

FET, MOSFET Arrays Overview

The IRF7301TRPBF is a dual N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It utilizes planar strip technology to achieve low on-resistance and fast switching speeds. The device is housed in an SO-8 surface-mount package, providing high current density and efficient thermal performance. Key electrical parameters include a drain-source voltage of 20 V, a continuous drain current of 5.7 A at 25°C, and a maximum on-state resistance of 50 mΩ at 4.5 V gate drive. The component supports junction temperatures up to 150°C and features a typical gate charge of 13.3 nC.

FET, MOSFET Arrays Feature Summary

  • Dual N-channel configuration within a single compact SO-8 package for space-efficient designs.
  • Planar strip technology ensures low specific on-resistance and enhanced current handling capabilities.
  • Fast switching characteristics with low gate charge support high-frequency operation.

FET, MOSFET Arrays Applications

  • Motor control circuits requiring dual channel switching.
  • Switching mode power supplies (SMPS) utilizing synchronous rectification.
  • DC-DC converter topologies needing efficient low-voltage power management.

FET, MOSFET Arrays Procurement Notes

Verify the exact ordering part number against the manufacturer's official datasheet to ensure compatibility with required packaging options such as tape and reel quantities. Confirm that the specified voltage and current ratings align with the target application's operational limits before finalizing procurement decisions.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel solution is required in an SO-8 footprint. Ensure the gate drive voltage meets the minimum threshold for optimal Rds(on) performance. Consider the thermal dissipation requirements given the 2 W power rating at 25°C ambient temperature.

FET, MOSFET Arrays Part Context

This component belongs to Infineon's HEXFET family, known for high-efficiency power switching applications. The IRF7301 series offers a balance of low on-resistance and robust switching performance, suitable for various consumer and industrial electronics requiring reliable power management in compact form factors.

FET, MOSFET Arrays Replacement Considerations

Check for direct cross-reference part numbers from Infineon or other manufacturers offering identical pinouts and electrical specifications. Verify that any substitute maintains the same SO-8 package dimensions and thermal characteristics to ensure board compatibility.

IRF7301TRPBFIRF7301TRPBF
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