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IRF7303TRPBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 30V 4.9A 8SO. Review the specifications below when checking this part for your BOM.
The IRF7303TRPBF is a dual N-channel enhancement mode MOSFET from Infineon's HEXFET series, housed in an SOIC-8 surface-mount package. It features a drain-source breakdown voltage of 30 V and a continuous drain current of 4.9 A at 25°C. The device exhibits a maximum on-resistance of 50 mΩ at 10 V gate drive and 80 mΩ at 4.5 V, supporting logic-level control. With a total gate charge of 16.7 nC and power dissipation of 2 W, it operates within a junction temperature range of -55°C to +150°C.
Verify the specific suffix against official Infineon documentation to confirm tape and reel specifications. Ensure the ordering part number matches the required packaging format. Cross-reference datasheet revisions to confirm parameter consistency before finalizing procurement orders.
Select this component when a dual N-channel solution is required in an SOIC-8 footprint. The 30 V rating suits low-voltage systems. Verify that the 4.9 A current capacity meets load requirements and that the 50 mΩ resistance aligns with efficiency targets under the intended gate drive voltage.
This part belongs to the Infineon HEXFET family, known for high-performance silicon planar technology. The IRF7303 variant specifically addresses the need for dual-channel switching in space-constrained designs, offering a balance between current handling capability and low on-state resistance for general-purpose power switching.
The IRF7303TRPBFXTMA1 is a confirmed equivalent part number representing the same device with different packaging or marking specifications. Verify pinout compatibility and electrical parameters before substitution.
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