IRF7304TRPBF

FET, MOSFET Arrays Overview

The IRF7304TRPBF is a dual P-channel enhancement mode MOSFET from Infineon's HEXFET series, housed in an SOIC-8 surface-mount package. It features a drain-source voltage of 20 V and continuous drain currents of 2.3 A per channel. The device exhibits a maximum on-resistance of 250 mΩ and a gate charge of 9.3 nC. Operating within a temperature range of -55°C to +150°C, it dissipates up to 2 W of power.

FET, MOSFET Arrays Feature Summary

• Dual independent P-channel configuration for complementary switching applications
• Enhanced planar technology for low thermal resistance and high reliability
• Lead-free packaging compliant with RoHS directives

FET, MOSFET Arrays Applications

• Low-side load switching circuits
• Power management modules
• DC-DC converter output stages

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix TRPBF against the manufacturer datasheet to confirm tape-and-reel packaging and lead-free status. Ensure the component matches the exact HEXFET generation specifications. Cross-reference the SOIC-8 footprint dimensions with PCB design files before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component when a compact dual P-channel solution is required for 20 V systems. Compare the 250 mΩ on-resistance against alternative packages to balance conduction losses with thermal dissipation capabilities. Evaluate the 9.3 nC gate charge for compatibility with available driver circuitry.

FET, MOSFET Arrays Part Context

This part belongs to the Infineon HEXFET family, known for silicon planar technology. It serves as a surface-mount alternative to through-hole variants like the IRF7306PBF. The SOIC-8 form factor allows for automated assembly in space-constrained electronic designs requiring dual polarity control.