IRF7306TR

FET, MOSFET Arrays Overview

The IRF7306TR is a dual P-Channel Power MOSFET from the HEXFET Generation V series, manufactured by Infineon Technologies. It utilizes advanced planar technology to achieve ultra-low on-resistance and fast switching capabilities within an SO-8 surface-mount package. The device features a drain-to-source breakdown voltage of -30V and a continuous drain current rating of -3.6A at 25°C. Key electrical parameters include a maximum static drain-to-source on-resistance of 0.10Ω at VGS = -10V and a total gate charge of 25nC. The component supports a junction temperature range from -55°C to +150°C with a power dissipation capacity of 2.0W.

FET, MOSFET Arrays Feature Summary

• Dual P-Channel configuration in a single SO-8 package for space-efficient designs
• Generation V HEXFET technology providing ultra-low on-resistance per silicon area
• Fast switching speed combined with ruggedized device design
• Customized leadframe for enhanced thermal characteristics

FET, MOSFET Arrays Applications

• DC-DC converters
• Power management circuits
• Load switches
• Motor control applications

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging type and compliance status. Ensure the component matches the required pinout and thermal specifications for the target PCB layout. Confirm that the manufacturer designation aligns with current Infineon Technologies product lines following industry acquisitions.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring efficient dual P-Channel switching in compact form factors. Evaluate the thermal resistance and derating curves to ensure adequate heat dissipation within the operating environment. Consider the gate threshold voltage and drive requirements to optimize switching performance and minimize conduction losses.

FET, MOSFET Arrays Part Context

This part belongs to the HEXFET Power MOSFET family, known for high reliability and efficiency. The SO-8 package allows for vapor phase, infrared, or wave soldering techniques. The device is designed to reduce board space while maintaining robust performance in various power applications.

FET, MOSFET Arrays Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains compatible voltage ratings, current handling, and package dimensions.