IRF7307QTRPBF

Description：MOSFET N/P-CH 20V 5.2A/4.3A 8SO
Series：-

SKU:fd63c51f4231 Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

IRF7307QTRPBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N/P-CH 20V 5.2A/4.3A 8SO. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRF7307QTRPBF

Description：MOSFET N/P-CH 20V 5.2A/4.3A 8SO
Series：-
Mfr：Infineon Technologies
Package：Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：5.2A, 4.3A
Rds On (Max) @ Id, Vgs：50mOhm @ 2.6A, 4.5V
Vgs(th) (Max) @ Id：700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：660pF @ 15V
Power - Max：2W
Operating Temperature：-
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SO
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for IRF7307QTRPBF

IRF7307QTRPBF

FET, MOSFET Arrays Overview

The IRF7307QTRPBF is a dual HEXFET power MOSFET in an SO-8 package, containing one N-channel and one P-channel enhancement-mode transistor. The N-channel device supports a drain-source voltage of 20 V with a maximum continuous drain current of 5.2 A and an on-resistance of 26 mΩ. The P-channel device features a 20 V rating, a 4.3 A current capacity, and an on-resistance of 50 mΩ. Both transistors operate within a junction temperature range of -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

Dual configuration integrating independent N-channel and P-channel enhancement-mode MOSFETs within a single surface-mount package.
Low on-resistance design optimized for efficient power switching and minimal conduction losses.
Automotive-grade qualification ensuring reliability under demanding thermal and electrical conditions.

FET, MOSFET Arrays Applications

Automotive low-side and high-side load switching
Power distribution units
Motor control circuits

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix TRPBF indicates tape and reel packaging when sourcing. Confirm automotive grade status through official Infineon documentation or authorized distributors. Ensure the component meets RoHS directives before integration into final assemblies.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring complementary N/P channel switching in a compact form factor. Evaluate the 20 V breakdown voltage against system rail requirements. Consider the 26 mΩ and 50 mΩ on-resistances for thermal management calculations in power distribution designs.

FET, MOSFET Arrays Part Context

This part belongs to the Infineon HEXFET family, known for advanced silicon technology. It utilizes the SO-8 package to provide a dual-transistor solution suitable for space-constrained automotive and industrial electronics. The Q designation signifies automotive qualification standards.