IRF7307TR

FET, MOSFET Arrays Overview

The UMW IRF7307TR is a dual N-channel and P-channel enhancement mode MOSFET in an SOP-8 surface mount package. It utilizes Generation V technology for ultra-low on-resistance. The N-channel device supports a drain-source voltage of 20V with an on-resistance of 53mΩ at VGS=4.5V and 70mΩ at VGS=2.7V. The P-channel device features a -20V rating with an on-resistance of 90mΩ at VGS=-4.5V and 140mΩ at VGS=-2.7V. The component operates within a junction temperature range of -55°C to +150°C and includes dynamic dv/dt rating capabilities.

FET, MOSFET Arrays Feature Summary

• Dual configuration integrating separate N-channel and P-channel transistors into a single compact package.
• Generation V technology implementation providing enhanced switching performance and low conduction losses.
• Customized leadframe design within the SOP-8 package to improve thermal dissipation characteristics.
• Dynamic dv/dt rating capability to manage rapid voltage transitions during operation.

FET, MOSFET Arrays Applications

• Power management circuits requiring complementary switching pairs.
• DC-DC converter topologies utilizing synchronous rectification.
• Motor driver interfaces needing integrated high-side and low-side control elements.

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering code against manufacturer documentation to confirm the tape and reel delivery mode and base quantity requirements. Ensure that the SOP-8 package dimensions align with the target PCB footprint specifications before finalizing procurement decisions.

FET, MOSFET Arrays Selection Notes

Select this component when space-constrained designs require both N-type and P-type switching capabilities within a single footprint. Evaluate the on-resistance values at the intended gate drive voltages to ensure efficiency targets are met under expected load conditions.

FET, MOSFET Arrays Part Context

This part belongs to the IRF7307 series, representing a dual MOSFET solution from UTD Semiconductor Co., Limited. It serves as a surface-mount alternative to discrete transistor arrangements, consolidating two independent channels into one standardized package format.

FET, MOSFET Arrays Replacement Considerations

Cross-reference with other dual N/P-channel MOSFETs in SOP-8 packages. Verify pinout compatibility and electrical parameter equivalence, specifically drain-source voltage ratings and on-resistance thresholds, before substituting.