FET, MOSFET Arrays IRF7311PBF product image

IRF7311PBF

  • Description:MOSFET 2N-CH 20V 6.6A 8SO
  • Series:HEXFET®

SKU:3283f6b44d1f Category: Brand:

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IRF7311PBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 20V 6.6A 8SO. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRF7311PBF

  • Description:MOSFET 2N-CH 20V 6.6A 8SO
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:6.6A
  • Rds On (Max) @ Id, Vgs:29mOhm @ 6A, 4.5V
  • Vgs(th) (Max) @ Id:700mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:27nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:900pF @ 15V
  • Power - Max:2W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SO
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for IRF7311PBF

IRF7311PBF

FET, MOSFET Arrays Overview

The IRF7311PBF is a dual N-channel power MOSFET from Infineon Technologies, housed in an SO-8 surface-mount package. It features a maximum drain-source voltage (VDS) of 20 V and a continuous drain current (ID) of 6.6 A at 25°C. The device exhibits a maximum on-resistance (RDS(on)) of 29 mΩ at a gate-source voltage of 4.5 V. Key switching parameters include a typical total gate charge (QG) of 18 nC at 4.5 V and a typical gate-drain charge (Qgd) of 6.2 nC. Thermal performance is characterized by a maximum junction-to-ambient thermal resistance (RthJA) of 62.5 K/W, with a maximum operating junction temperature (Tj) of 150°C.

FET, MOSFET Arrays Feature Summary

  • Dual N-channel configuration within a single compact SO-8 package for space-efficient circuit design.
  • Low on-resistance optimized for efficient power handling at logic-level gate drive voltages.
  • Fast switching characteristics supported by low gate charge values to minimize drive losses.

FET, MOSFET Arrays Applications

  • DC-DC converter circuits requiring low-voltage synchronous rectification.
  • Power management modules for portable electronic devices.
  • Load switching applications in automotive or industrial control systems.

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix 'PBF' confirms lead-free compliance and RoHS standards as per Infineon's current product status documentation. Confirm the package type matches the required PCB footprint for SO-8. Check for any recent lifecycle notices regarding obsolescence or recommended replacements before finalizing procurement plans.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel topology is required in a small outline package. Ensure the application voltage remains below the 20 V limit and that the thermal design can handle the specified power dissipation. Verify that the gate drive voltage meets the minimum threshold for optimal RDS(on) performance.

FET, MOSFET Arrays Part Context

This part belongs to Infineon's portfolio of discrete power semiconductors designed for general-purpose switching applications. The IRF7311 series provides a balance of current handling and switching speed suitable for low-voltage DC/DC conversion and load management tasks where board space is constrained.

FET, MOSFET Arrays Replacement Considerations

Consult official cross-reference data for electrically equivalent dual N-channel MOSFETs in SO-8 packages with comparable VDS and ID ratings. Verify pinout compatibility and thermal characteristics before substituting.

IRF7311PBFIRF7311PBF

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