FET, MOSFET Arrays IRF7313PBF product image

IRF7313PBF

  • Description:MOSFET 2N-CH 30V 6.5A 8SO
  • Series:HEXFET®

SKU:dde4c203c0cc Category: Brand:

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IRF7313PBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 30V 6.5A 8SO. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRF7313PBF

  • Description:MOSFET 2N-CH 30V 6.5A 8SO
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:6.5A
  • Rds On (Max) @ Id, Vgs:29mOhm @ 5.8A, 10V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:33nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:650pF @ 25V
  • Power - Max:2W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SO
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for IRF7313PBF

IRF7313PBF

FET, MOSFET Arrays Overview

The IRF7313PBF is a dual N-channel HEXFET power MOSFET manufactured by Infineon Technologies, housed in an SO-8 surface-mount package. It features a maximum drain-source voltage (V_DS) of 30 V and a continuous drain current (I_D) of 6.5 A at 25°C. The device exhibits a maximum on-resistance (R_DS(on)) of 46 mΩ at 4.5 V gate drive and 29 mΩ at 10 V gate drive. Key electrical characteristics include a typical total gate charge (Q_G) of 22 nC at 10 V and a thermal resistance from junction to ambient (R_thJA) of 62.5 K/W. The component supports a maximum junction temperature of 150°C and operates within a temperature range of -55°C to 150°C.

FET, MOSFET Arrays Feature Summary

  • Dual N-channel configuration integrating two independent logic-level MOSFETs within a single compact package for space-constrained designs.
  • HEXFET technology providing low on-resistance and high switching efficiency suitable for power management applications.
  • Logic-level gate threshold enabling direct drive from standard logic voltages without requiring additional gate driver circuitry.

FET, MOSFET Arrays Applications

  • DC-DC converter circuits
  • Motor control systems
  • Power management modules

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix PBF to confirm lead-free compliance and tube packaging format. Ensure the part number matches the exact dual N-channel specification rather than mixed polarity variants like the IRF7317 or IRF7319 series. Cross-reference with official Infineon documentation to confirm current production status and availability constraints.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel topology is required within an SO-8 footprint. Evaluate the 46 mΩ R_DS(on) at 4.5 V if driving directly from lower voltage logic sources. Consider the 62.5 K/W thermal resistance for PCB layout planning to ensure adequate heat dissipation under load conditions.

FET, MOSFET Arrays Part Context

This device belongs to the Infineon HEXFET family, known for optimized power performance in surface-mount packages. The IRF7313 variant specifically targets applications needing two matched N-channel switches, distinguishing it from single-channel counterparts like the IRF7413 or complementary pairs found in other series.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with alternative dual N-channel MOSFETs based on pinout, voltage ratings, and thermal characteristics before substitution.

IRF7313PBFIRF7313PBF

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