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IRF7313PBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 30V 6.5A 8SO. Review the specifications below when checking this part for your BOM.
The IRF7313PBF is a dual N-channel HEXFET power MOSFET manufactured by Infineon Technologies, housed in an SO-8 surface-mount package. It features a maximum drain-source voltage (V_DS) of 30 V and a continuous drain current (I_D) of 6.5 A at 25°C. The device exhibits a maximum on-resistance (R_DS(on)) of 46 mΩ at 4.5 V gate drive and 29 mΩ at 10 V gate drive. Key electrical characteristics include a typical total gate charge (Q_G) of 22 nC at 10 V and a thermal resistance from junction to ambient (R_thJA) of 62.5 K/W. The component supports a maximum junction temperature of 150°C and operates within a temperature range of -55°C to 150°C.
Verify the specific ordering suffix PBF to confirm lead-free compliance and tube packaging format. Ensure the part number matches the exact dual N-channel specification rather than mixed polarity variants like the IRF7317 or IRF7319 series. Cross-reference with official Infineon documentation to confirm current production status and availability constraints.
Select this component when a dual N-channel topology is required within an SO-8 footprint. Evaluate the 46 mΩ R_DS(on) at 4.5 V if driving directly from lower voltage logic sources. Consider the 62.5 K/W thermal resistance for PCB layout planning to ensure adequate heat dissipation under load conditions.
This device belongs to the Infineon HEXFET family, known for optimized power performance in surface-mount packages. The IRF7313 variant specifically targets applications needing two matched N-channel switches, distinguishing it from single-channel counterparts like the IRF7413 or complementary pairs found in other series.
Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with alternative dual N-channel MOSFETs based on pinout, voltage ratings, and thermal characteristics before substitution.
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