FET, MOSFET Arrays IRF7313TRPBF product image

IRF7313TRPBF

$1.05
  • Description:MOSFET 2N-CH 30V 6.5A 8SO
  • Series:HEXFET®

SKU:152440bfc708 Category: Brand:

  
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IRF7313TRPBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 30V 6.5A 8SO. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRF7313TRPBF

  • Description:MOSFET 2N-CH 30V 6.5A 8SO
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:6.5A
  • Rds On (Max) @ Id, Vgs:29mOhm @ 5.8A, 10V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:33nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:650pF @ 25V
  • Power - Max:2W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SO
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for IRF7313TRPBF

IRF7313TRPBF

FET, MOSFET Arrays Overview

The IRF7313TRPBF is a dual N-channel enhancement-mode MOSFET from the Infineon HEXFET series, housed in an 8-pin SOIC surface-mount package. It features a maximum drain-source voltage of 30 V and a continuous drain current of 6.5 A at 25°C. The device exhibits a typical on-resistance of 46 mΩ at Vgs=10V and 29 mΩ at Vgs=4.5V, with a gate charge of 22 nC. Operating within a temperature range of -55°C to +150°C, it dissipates up to 2 W of power.

FET, MOSFET Arrays Feature Summary

  • Dual N-channel configuration for compact circuit integration
  • Logic-level gate drive capability for direct microcontroller interfacing
  • Low on-resistance optimized for efficient power switching
  • Enhanced thermal performance suitable for high-density applications

FET, MOSFET Arrays Applications

  • DC-DC converter output stages
  • Load switching in portable electronics
  • Power management circuits in consumer devices
  • Battery protection modules

FET, MOSFET Arrays Procurement Notes

Verify the component authenticity by checking the marking code against official Infineon datasheets. Confirm the suffix TRPBF indicates tape-and-reel packaging and lead-free compliance. Ensure the ordering part number matches the specific lot traceability requirements for your manufacturing process.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel solution is required in an SOIC-8 footprint. It is suitable for low-voltage applications requiring logic-level control. Compare on-resistance and gate charge values against system efficiency targets. Verify that the 30V rating exceeds the maximum operating voltage with adequate margin.

FET, MOSFET Arrays Part Context

This part belongs to the Infineon HEXFET family, known for high-performance power MOSFETs. The IRF7313 variant specifically addresses the need for dual-channel integration in space-constrained designs. It complements single-channel counterparts like the IRF7314 by providing two independent switches in one package.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes include the IRF7313Q for automotive-grade requirements. Cross-reference with other manufacturers' dual N-channel 30V SOIC-8 MOSFETs if pin compatibility and electrical parameters match exactly.

IRF7313TRPBFIRF7313TRPBF
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