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IRF7313TRPBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 30V 6.5A 8SO. Review the specifications below when checking this part for your BOM.
The IRF7313TRPBF is a dual N-channel enhancement-mode MOSFET from the Infineon HEXFET series, housed in an 8-pin SOIC surface-mount package. It features a maximum drain-source voltage of 30 V and a continuous drain current of 6.5 A at 25°C. The device exhibits a typical on-resistance of 46 mΩ at Vgs=10V and 29 mΩ at Vgs=4.5V, with a gate charge of 22 nC. Operating within a temperature range of -55°C to +150°C, it dissipates up to 2 W of power.
Verify the component authenticity by checking the marking code against official Infineon datasheets. Confirm the suffix TRPBF indicates tape-and-reel packaging and lead-free compliance. Ensure the ordering part number matches the specific lot traceability requirements for your manufacturing process.
Select this component when a dual N-channel solution is required in an SOIC-8 footprint. It is suitable for low-voltage applications requiring logic-level control. Compare on-resistance and gate charge values against system efficiency targets. Verify that the 30V rating exceeds the maximum operating voltage with adequate margin.
This part belongs to the Infineon HEXFET family, known for high-performance power MOSFETs. The IRF7313 variant specifically addresses the need for dual-channel integration in space-constrained designs. It complements single-channel counterparts like the IRF7314 by providing two independent switches in one package.
Direct substitutes include the IRF7313Q for automotive-grade requirements. Cross-reference with other manufacturers' dual N-channel 30V SOIC-8 MOSFETs if pin compatibility and electrical parameters match exactly.
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