IRF7314QTRPBF

Description：MOSFET 2P-CH 20V 5.2A 8SO
Series：-

SKU:448569e42e29 Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

IRF7314QTRPBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2P-CH 20V 5.2A 8SO. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRF7314QTRPBF

Description：MOSFET 2P-CH 20V 5.2A 8SO
Series：-
Mfr：Infineon Technologies
Package：Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：5.2A
Rds On (Max) @ Id, Vgs：58mOhm @ 5.2A, 4.5V
Vgs(th) (Max) @ Id：700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：29nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：913pF @ 15V
Power - Max：2.4W
Operating Temperature：-
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SO
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for IRF7314QTRPBF

IRF7314QTRPBF

FET, MOSFET Arrays Overview

The IRF7314QTRPBF is a dual P-Channel HEXFET Power MOSFET in an SO-8 package. It features a -20V drain-source voltage rating and supports continuous drain currents of -5.2A at 25°C and -4.3A at 70°C. The device offers ultra-low on-resistance, with maximum values of 0.058Ω at VGS=-4.5V and 0.098Ω at VGS=-2.7V. It operates up to a junction temperature of 175°C and allows repetitive avalanche energy up to Tjmax.

FET, MOSFET Arrays Feature Summary

Dual P-Channel configuration within a single surface-mount package
Advanced process technology for extremely low on-resistance per silicon area
175°C junction operating temperature capability
Repetitive avalanche rating allowed up to maximum junction temperature

FET, MOSFET Arrays Applications

Power management circuits requiring high efficiency
Automotive applications utilizing dual MOSFETs
High-temperature industrial power control systems

FET, MOSFET Arrays Procurement Notes

Verify the component matches the specific Infineon Technologies datasheet specifications. Confirm the package type is SO-8 and the electrical ratings align with system requirements. Ensure the ordering suffix corresponds to the tape and reel packaging format if required for automated assembly processes.

FET, MOSFET Arrays Selection Notes

Select this component for designs needing dual P-Channel switching in a compact footprint. Consider the thermal resistance and current derating curves when designing for ambient temperatures above 25°C. Evaluate the gate threshold voltage and total gate charge against the driving circuit capabilities to ensure optimal switching performance.

FET, MOSFET Arrays Part Context

This part belongs to the HEXFET Power MOSFET family from International Rectifier, now part of Infineon Technologies. The series utilizes advanced processing techniques to achieve low on-resistance and improved thermal performance. The dual configuration reduces board space compared to discrete solutions.

FET, MOSFET Arrays Replacement Considerations

Check for direct pin-compatible alternatives within the same HEXFET family that meet the -20V and current requirements. Verify that any substitute maintains the 175°C junction temperature rating and SO-8 package dimensions.